[11p-A21-1~12] 13.7 化合物及びパワーデバイス・プロセス技術・評価

15:15 〜 15:30英語発表

[11p-A21-6] Suppression of Leakage Current Through the Interface of MOVPE Grown Epitaxial Layer and Semi-Insulating beta-Ga2O3 (010) Substrate by Fe-Ion Implantation

〇(PC)Sandeep Kumar¹, Yoshiki Iba², Junya Yoshinaga^2,3, Yoshinao Kumagai², Masataka Higashiwaki^4,1, Takafumi Kamimura¹ (1.NICT, 2.Tokyo Univ. of Agric. and Tech., 3.Nippon Sanso Corporation, 4.Osaka Metropolitan Univ.)

キーワード：

Ga2O3、Leakage current、Capacitance Voltage

Homoepitaxial growth of beta-Ga₂O₃ has been widely explored using MBE, MOVPE (MOCVD), and HVPE techniques for device fabrication. However, an issue has occasionally been reported involving the buildup of silicon at the interface between the epitaxial layer and the substrate, leading to undesirable leakage currents. This leakage current was effectively suppressed by growing an unintentionally doped (UID) layer on an approximately 100 nm thick, Fe ion–implanted substrate with a concentration of 5 x 10¹⁹ cm^-3.