講演情報
[11p-E201-11]Revealing the Origin of Fatigue in HfO2-Based Ferroelectric Films: The Critical Role of Imprint
〇(DC)Zhenhong Liu1, Mitsuru Takenaka1, Shinichi Takagi1,2, Kasidit Toprasertpong1 (1.Univ. Tokyo, 2.Teikyo Univ.)
キーワード：
ferroelectric、fatigue、imprint
HfO2-based ferroelectric materials have attracted increasing attention in recent years due to their scalable and CMOS-compatible options for non-volatile memory applications. However, several reliability issues, including wake-up, imprint, and fatigue, must be properly addressed before its implementation. In our previous work, we discussed the interrelation between imprint and wake-up and found that both arise from the local interfacial charge distribution. However, the fatigue, representing the polarization loss during field cycling, remains unclear. In this work, based on the J-E behavior probed across different electric-field ranges in the Hf0.5Zr0.5O2 (HZO) Metal-Ferroelectric-Metal (MFM) capacitor, we successfully clarify the mechanism underlying the reduction in polarization response, based on the Preisach model.