講演情報
[11p-E301-2]Low-Leakage IGZO Contact-Controlled Transistor towards Long Retention Analog Memory
〇(D)Mark Denusta Ilasin1, Juan Paolo Soria Bermundo1, Mutsumi Kimura2, Hidenori Kawanishi1, Senku Tanaka3, Kosuke O. Hara1, Yukiharu Uraoka1 (1.NAIST, 2.Ryukoku Univ., 3.Kindai Univ.)
キーワード：
contact-controlled transistor、thin-film transistor、oxide semiconductor
This presentation reports an IGZO contact-controlled (CC) transistor used as the storage transistor (S-Tr) in a two-transistor-one-capacitor (2T1C) analog memory cell. In 2T1C cells, the stored analog value is held as charge on a capacitor, and its retention is limited by the off-state leakage of the S-Tr. By replacing the conventional thin-film transistor with a CC transistor, whose reverse-biased Schottky source suppresses off-state conduction at the contact rather than in the channel, we reduce the storage leakage from about 40 pA to below 3.2 fA (more than four orders of magnitude) and extend the retention time from roughly 0.4 s to over 5000 s in matched, co-fabricated devices. Because this suppression is contact-based, it is complementary to channel and dielectric optimization, making the CC transistor a promising storage device for analog long-retention memory.