講演情報
[8a-A33-7]Quality Enhancement and Carbon Byproduct Suppression in MOCVD Growth of Monolayer WSe2
〇(PC)Wenjin Zhang1, Yuta Sawai1,2, Ryotaro Sakaibara1, Takahiko Endo1, Yasumitsu Miyata1,2 (1.NIMS, 2.Tokyo Metro. Univ.)
キーワード：
TMD、Growth、MOCVD
Transition metal dichalcogenides (TMDs), especially p-type WSe2, have attracted extensive interest for next generation semiconductor devices. Metal-organic chemical vapor deposition (MOCVD) is a promising method for the controllable and scalable growth of TMDs [1]. However, carbon byproducts generated from organic precursors can induce carbon contamination during high-temperature MOCVD growth, posing a challenge to improving material quality [2]. In this study, we investigated selenium precursor combinations that enable high-temperature MOCVD growth of WSe2 with suppressed carbon byproduct formation, without using highly hazardous H2Se.
Monolayer WSe2 was grown on sapphire substrates with a metal-organic W precursor, (t-BuN=)2W(NMe2)2, and solid-source selenium precursor. We found that this precursor combination
produced triangular monolayer WSe2 grains with an average size up to 100 um2 at 1000 ºC (Fig. 1a). Furthermore, photoluminescence (PL) analysis reveals that the exciton peaks tend to exhibit narrower linewidths at higher growth temperature (Fig.1b,c). Under optimized conditions, the WSe2 samples grown at 900 °C exhibited a narrow PL linewidth of ~60 meV, comparable to that obtained using a conventional WO3 precursor, indicating improved crystalline quality. These results demonstrate a safer and controllable route to high-quality WSe2 growth with reduced carbon contamination for semiconductor applications.
Monolayer WSe2 was grown on sapphire substrates with a metal-organic W precursor, (t-BuN=)2W(NMe2)2, and solid-source selenium precursor. We found that this precursor combination
produced triangular monolayer WSe2 grains with an average size up to 100 um2 at 1000 ºC (Fig. 1a). Furthermore, photoluminescence (PL) analysis reveals that the exciton peaks tend to exhibit narrower linewidths at higher growth temperature (Fig.1b,c). Under optimized conditions, the WSe2 samples grown at 900 °C exhibited a narrow PL linewidth of ~60 meV, comparable to that obtained using a conventional WO3 precursor, indicating improved crystalline quality. These results demonstrate a safer and controllable route to high-quality WSe2 growth with reduced carbon contamination for semiconductor applications.