講演情報
[8a-PB4-7]High Temperature Operation and Reliability at 400oC of CMOS Operational Amplifier Circuits based on 4H-SiC
〇(D)Anh Dung Nguyen1, Kazutoshi Kojima2, Seiji Ishikawa1,3, Tomonori Maeda1,3, Hiroshi Sezaki1,3, Shin-Ichiro Kuroki1 (1.RISE, Hiroshima Univ, 2.AIST, 3.Phenitec Semiconductor Corp)
キーワード：
4H SiC、high temperature applications、CMOS electronic devices
The CMOS 4H-SiC two-stage operational amplifier was fabricated successfully and investigated depending on increasing temperature. The results show that voltage gain meets the fluctuation in both high temperature tests and reliability tests. When the temperature varies from room temperature to 400oC, the voltage gain decreased from 46.02 dB to 45.06 dB. Besides, after 125 aging hours, the output signal slightly goes up to 46.75 dB. It is possible that the decline of threshold voltage of NMOS and PMOS causes the falling of biasing voltage of the whole circuit and each input terminal. This accounts for the change of operating point which directly leads to the fluctuation of voltage gain.