講演情報
[8p-PB3-12]Growth of MoS2 Thin Films Using the Sol-Gel Method and Their Characterisation
〇(M2)LIU HAOTIAN3, Tsuyoshi Takaoka1, Md Iftekharul Alam2, Akinobu Teramoto2, Md Arafat Ali3, J. Rika Simon1 (1.Tohoku Univ. IMRAM, 2.Hiroshima Univ. RISE, 3.Tohoku Univ. Sci.)
キーワード：
TMDs、Raman、STM
This work characterises the features of MoS2 films fabricated by the Sol-gel method by cross-checking with Raman, XPS, STM and TEM. Some of the results were compared with those obtained from the exfoliated crystal to observe the different parameters between the two types of samples. Sol-gel films were prepared using different precursor concentrations from 5mM to 30mM to obtain different thicknesses. Raman shows broaden peaks, an enhanced ~450cm-1 signal suggesting sulphur vacancies, and a disorder-driven LA(M) mode, compared with high-quality exfoliation crystals. XPS confirms sub-stoichiometric S/Mo ratios consistent with sulphur vacancies, and STS shows a local band gap around 1.3 eV with spatial inhomogeneity. Together, it shows that sol-gel MoS2 is defect-rich, and its defect density is related to precursor concentration.