講演情報
[9a-A11-4]Fabrication and Cryogenic Resistive Switching Characteristics of Sc-doped Amorphous GaOx Crossbar Array Memristors
〇(M2)George Ayoub1, Sora Obinata1,2,3, Zhuo Diao1, Tetsuya Tohei1, Akira Sakai2,1 (1.Grad. Sch. Eng. Sci., The Univ. of Osaka, 2.OTRI-The Univ. of Osaka, 3.CSRN, The Univ. of Osaka)
キーワード：
Memristor、Neuromorphic Computing、Cryogenic
Amorphous GaOx (a-GaOx) memristors are known to exhibit non-volatile resistive switching driven by oxygen vacancy redistribution, making them promising candidates for non-volatile memory devices. In addition, the analog and multi-level nature of their resistance states is attractive for in-memory computing allowing computationally intensive AI tasks and matrix operations to be performed within the memory cells. Such memristive systems can emulate neuromorphic functions, providing a critical foundation for brain-inspired artificial intelligence. Previous work has demonstrated that incorporating scandium (Sc) as a dopant enhances the resistive switching mechanisms of a-GaOx at both room temperature and higher temperatures up to 800K. This doping stabilizes the oxygen vacancy network through localized structural confinement, enabling low-variability resistive switching through the uniform dispersion of Sc. In the present work, we uniquely fabricate Sc-doped a-GaOx crossbar array memristors and evaluate under ultra-low cryogenic conditions down to 3 K, establishing a versatile hardware platform that is vital not only for resilient high-temperature electronics but also for quantum technologies and aerospace equipment.