講演情報
[9a-N101-10]Demonstration of top-emitting in AlGaN-based deep-ultraviolet light-emitting diodes with high wall-plug efficiency
〇Guodong Hao1, Manabu Taniguchi1, Linjie Wei1, Shin-ichiro Inoue1 (1.NICT)
キーワード：
AlGaN DUV-LED、top-emitting、wall-plug efficiency
AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) have attracted considerable interest in various applications, including surface disinfection, air and water purification, DUV lithography, and solar-blind communications. Although the performance of DUV-LEDs has improved significantly over the past decade, reported devices have predominantly rely on flip-chip structures, in which light is extracted through the substrate side. Top-emitting DUV-LEDs with an epitaxial-layer-up structure could simplify device fabrication processes and reduce manufacturing costs. However, such a structure has not been realized to date due to the strong DUV-light absorption in the top ohmic contact and electrode layers. In this work, we report the successful realization of top-emitting DUV-LEDs with high wall-plug efficiency (WPE) at an emission wavelength of 275 nm.