講演情報
[9a-N101-11]Highly-collimated AlN-substrate deep-ultraviolet LEDs for low-bit-error-rate optical wireless communication
〇韋 霊傑1、Hao Guo-Dong1、谷口 学1、井上 振一郎1 (1.情報通信研究機構)
キーワード：
深紫外LED、光通信、遠視野パターン
Deep-ultraviolet (DUV) optical wireless communication has gained much interest because DUV light exhibits solar-blind characteristic, which is advantageous for outdoor free-space optical links. Nevertheless, practical DUV communication remains challenging, since strong atmospheric scattering introduces severe channel loss. The resulting attenuation weakens the received optical signal and increases the bit error rate (BER). Thus, suppressing the BER is a key requirement for reliable DUV optical wireless communication. Here, we report low-BER DUV optical wireless communication using an AlN-substrate DUV micro-LED transmitter integrated with a Fresnel zone plate (FZP) nanostructure. The BER measurements confirmed a significant improvement for the FZP-integrated device over the conventional flat-surface device. At a data rate of 375 Mbps, the conventional flat-surface device approached a BER of 3.8×10-3, which is the threshold for forward error correction. In contrast, the FZP-integrated device reached a BER of 1.0×10-7 at the same data rate, corresponding to an approximately four-order-of-magnitude reduction. These results indicate that the enhanced LEE and improved beam collimation obtained with the FZP nanostructure effectively reduce the BER. This approach offers a promising device-level route toward high-reliability solar-blind DUV optical wireless links.