講演情報
[9a-S1-6]Characteristics of Mobility Limited by Coulomb Scattering due to MOS Interface Charges in Si n-MOSFETs at Cryogenic Temperatures
〇Zhao Jin1, Yutong Chen1, Hiroshi Oka2, Takahiro Mori2, Mitsuru Takenaka1, Shinichi Takagi3, Kasidit Toprasertpong1 (1.Univ. of Tokyo, 2.AIST, 3.Teikyo Univ.)
キーワード：
mobilitry、Coulomb scattering、cryogenic temperature
We investigated Coulomb scattering from MOS interface charges by measuring mobility in planar Si n-MOSFETs with different substrate doping concentrations following intentional charge generation via Fowler-Nordheim (F-N) stress. The Coulomb-scattering-limited mobility was extracted using Matthiessen’s rule for devices with different induced interface charge densities. At 4 K, the extracted mobility exhibited an inverse proportionality to the interface charge density.