講演情報
[9p-A22-6]Investigation of Schottky-Barrier MFSFETs with ferroelectric HfN thin film
〇KANGBAI LI1, HAORAN YAN1, HAOLIN WANG1, SHUN ICHIRO OHMI1 (1.Science Tokyo)
キーワード：
hafnium nitride、MFSFET
The high-κ HfO2 gate dielectric has been widely used in CMOS technology due to its excellent Si compatibility and scalability. Furthermore, HfO2 has also been found to exhibit ferroelectric properties. Therefore, ferroelectric HfO2 has been extensively investigated for Metal Ferroelectrics Silicon Field Effect Transistors (MFSFETs) applications. However, the unavoidable formation of an SiOx interfacial layer induces a depolarization field, which degrades the memory characteristics of both doped and nondoped ferroelectric HfO2 devices. We have reported the formation of ferroelectric HfN (Fe-HfN) thin films on Si substrates by electron cyclotron resonance (ECR)-plasma sputtering without interfacial layer formation.
In this study, we investigated the characteristics of Schottky-barrier MFSFETs (SB-MFSFETs) with Fe-HfN gate stack structures.
In this study, we investigated the characteristics of Schottky-barrier MFSFETs (SB-MFSFETs) with Fe-HfN gate stack structures.