講演情報
[9p-E311-12]Deposition and Ferroelectricity of Boron-doped (Al, Sc)N Thin Films
〇(M2C)PANGSHENG WANG1,2, SHIMIZU TAKAO1,2, FUNAKUBO HIROSHI1 (1.Tokyo Science, 2.NIMS)
キーワード：
ferroelectric thin film
Recent discovery of ferroelectricity in AlScN film prompt subsequent studies. In their wurtzite structure, increasing the scandium (Sc) concentration enhances ferroelectric performance, yielding a lower coercive field (Ec). However, due to structural difference of the endmember of AlN and ScN, it is difficult to increase the Sc concentration with keeping polar wurtzite structure; above this limit, the film tends to form a non-polar rock-salt structure, resulting in the degradation of ferroelectricity. According to the previous study based on theoretical investigation, the boron incorporation effectively expands the region where the wurtzite structure is stable. In this study, we have prepared the (Al, Sc, B)N films and characterized their electrical properties.