講演情報
[9p-N102-3]Growth and doping of diamond materials using laser resonant excitation of precursor molecules for high lattice integrity and doping concentrations
〇Yongfeng Lu1 (1.Univ of Nebraska-Lincoln)
キーワード：
Growth and doping、Diamonds、Resonant excitation
Pursuing high-level doping in diamonds without compromising crystallinity is extremely challenging yet essential for unlocking its electronics potential. Doping during growth outperforms post-growth surface diffusion, which damages the lattice. Over the past decade, we developed combustion CVD methods for high-quality, high-growth-rate diamond via laser vibrational excitation of key radicals (C2H4, NH3, BH2), producing highly conductive N- and B-doped diamonds (NDDs and BDDs). For BDDs, laser-induced thermal nonequilibrium suppresses excess BH, preventing segregation and crystallization issues. The films reach 4.3x1021 cm-3 boron concentration, 28.1 mOhm·cm resistivity, and 55.6 cm2·V-1·s-1 hole mobility. These crystalline BDDs exhibit enhanced glucose sensing, confirming laser excitation advantages. We also developed confocal CARS for 3D detection of vibrations, with time-resolved CARS enabling lattice defect mapping.