講演情報
[9p-PA1-2]Effects of Thermal Pressing Temperature on Electrical Conduction in Undoped and Nitrogen-Doped ZnO Nanoparticle Layers
〇(D)Shrestha Dey Monty1, Toshiyuki Yoshida1, Yasuhisa Fujita1,2 (1.Shimane University, 2.S-Nanotech Co-Creation Co., Ltd.)
キーワード：
ZnO Nanoparticles、Thermal Pressing、Thin Film Transistor Channel
One of the most interesting topics in the semiconductor processing field is the use of semiconductor particle layers for TFT channels instead of conventional thin films because of their wider selectivity on substrates like flexible and/or bendable materials, etc.; low processing costs; and huge area compatibility. Both n-type and p-type conduction in particle channel layers are necessary for the implementation of CMOS logic circuits employing thin film transistors (TFTs). In our laboratory, not only n-type but also p-type (nitrogen-doped) ZnO nanoparticles (NPs) were formed [1, 2]. However, the extremely high sheet resistance of particle layers degraded device performance, limiting their practical application. It has already been reported that thermal pressing can improve the electrical conductivity [3]. In this study, the effects of thermal pressing temperature on n-type and p-type ZnO nanoparticle layers are demonstrated.
[1] D. Itohara et al., J. Nanomater., 2016, 8219326 (2016). [2] Y. Fujita et al., Phys. Status Solidi C, 11, 1260 (2014). [3] T. Yoshida et al., e-J. Surf. Sci. Nanotechnol., 14, 175 (2016).
[1] D. Itohara et al., J. Nanomater., 2016, 8219326 (2016). [2] Y. Fujita et al., Phys. Status Solidi C, 11, 1260 (2014). [3] T. Yoshida et al., e-J. Surf. Sci. Nanotechnol., 14, 175 (2016).