[TP]Surface Elastic Waves Characteristics and Interaction with Electrons and Lights
N. Mikoshiba(1.Electrotechnical Laboratory)
1971 Conference on Solid State Devices
1971年9月1日〜9月2日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
当該イベント内で検索します。
検索する
1971 Conference on Solid State Devices
1971年9月1日〜9月2日The Tokyo Chamber of Commerce and Industry, Tokyo, Japan
当該イベント内で検索します。
検索する検索結果(39)
[S-1]Bulk Effect Device (I)
N. Mizushima、S. Mitsui(1.Nippon Telegraph and Telephone Public Corporation、2.Mitsubishi Electric Corporation)
[1-1]Acousto-Optic Modulation with Coupled Gunn Oscillator-Piezoelectric Structure
A. Ishida、M. Sumi(1.Nippon Telegraph and Telephone Public Corporation)
[1-2]Amplification of Acoustic Surface Waves under Transverse Magnetic Field in Coupled Intrinsic Semiconductor-Piezodielectric Systems
M. Yamanishi、M. Ono、T. Miyauchi、K. Yoshida(1.University of Osaka Prefecture、2.Okayama University)
[1-3]Control of Domain Shape in CdS Crystal and its Application
S. Furukawa、T. Hata(1.Tokyo Institute of Technology)
[1-4]Effects of Magnetic Field on Electron Transfer and Transport Properties in Gallium Arsenide
A. Sasaki、T. Tanaka(1.Kyoto University)
[S-2]Bulk Effect Device (II)
M. Uenohara、R. Nii(1.Nippon Electric Co., Ltd.、2.Nippon Telegraph and Telephone Public Corporation)
[2-1]The Oscillation Characteristics on an Avalanche Diode
K. Nawata、M. Ikeda(1.Nippon Telegraph and Telephone Public Corporation)
[2-2]Plasma Coupled Semiconductor Devices
T. Suzuki、Y. Mizushima(1.Nippon Telegraph and Telephone Public Corporation)
[S-3]Amorphous Memory
M. Kikuchi、S. Tanaka、K. Tanaka、E. Maruyama(1.Electrotechnical Laboratory、2.University of Tokyo、3.Hitachi Ltd.)
[3-1]Amorphous Semiconductors for Optical Memory and Other Devices
T. Igo、Y. Toyoshima(1.Nippon Telegraph and Telephone Public Corporation)
[3-2]Reversible Amorphous Optical Memory
M. Terao、H. Yamamoto、S. Asai、E. Maruyama(1.Hitachi Ltd.)
[3-3]Some Properties of Metal Photo-doped Chalcogenide Glasses
H. Sakuma、I. Shimizu、H. Kokado、E. Inoue(1.Tokyo Institute of Technology)
[3-4]A New Type of Switching and Memory Effect by Controlling Polarized Field in Semiconductor Interface
Y. Hamakawa、M. Yoshida、K. Yamanaka(1.Osaka University)
[S-4]Photoelectric Device
M. Aoki、K. Maeda、T. Oku、Y. Nannichi(1.University of Tokyo、2.Tokyo Shibaura Electric Co., Ltd.、3.Mitsubishi Electric Corporation、4.Nippon Electric Co., Ltd.)
[4-1]Nonlinear PME Effect and High Frequency Signal Generation in Bi
T. Fukase、T. Nakanomyo、Y. Nishina(1.Tohoku University)
[4-2]Self-Induced Pulsations in the Light Output from Double Heterostructure Injection Lasers
T. Ohmi、T. Suzuki、M. Nishimaki(1.Tokyo Institute of Technology)
[4-3]GaAsxSb1-x:Si Light Emitting Diode
T. Mitsuhata(1.Nippon Electric Co., Ltd.)
[4-4]Efficient CdTe EL Diodes Grown by Liquid-Phase Epitaxy
H. Ishida、K. Tanaka(1.Chiba University)
[4-5]Solid State Frequency Indicator
J. Nishizawa、T. Nonaka(1.Tohoku University)
[S-5]MOS Device
Y. Tarui、T. Sugano、S. Kawaji、N. Kawamura(1.Electrotechnical Laboratory、2.University of Tokyo、3.Gakushuin University、4.Nippon Electric Co., Ltd.)
[5-1]Differential Negative Resistance (DNR) in n-Channel MOSFET's of Si
Y. Murayama、Y. Katayama、N. Kotera、Y. Kamigaki、I. Yoshida、K. F. Komatsubara(1.Hitachi Ltd.)
[5-2]Anisotropic Channel Conductivity of MOSFETs on the (110) Surface of Silicon
H. Sakaki、T. Sugano(1.University of Tokyo)
[5-3]Technology and Performance of N-channel MOS-LSI Using Depletion-Type Load Elements
N. Hashimoto、M. Nagata、T. Masuhara(1.Hitachi Ltd.)
[5-4]The Proposal of Electrically Reprogramable Non-Volatile Semiconductor Memory
Y. Tarui、Y. Hayashi、K. Nagai(1.Electrotechnical Laboratory)
[5-5]Avalanche-Injection MOS Read-Only-Memory
H. Hara、K. Ohuchi、T. Sato、H. Tango、Y. Yasuda、Y. Ohmori、M. Yamanaka、Y. Takeishi(1.Tokyo Shibaura Electric Co., Ltd.)
[5-6]Electron Mobility in an MOS Inversion Layer
Y. C. Cheng(1.Bell-Northern Research)
[S-6]Other Devices
Y. Hamakawa、T. Tokuyama、M. Umeno、K. Takahashi(1.Osaka University、2.Hitachi Ltd.、3.Nagoya University、4.Tokyo Institute of Technology)
[6-1]A New Magnetocapacitance Effect in Metal-Ferromagnetic Semiconductor Junctions
M. Toda(1.RCA Research Laboratories, Inc.)
[6-2]A New Type of Stress Sensitive Device
Y. Miyai、N. Tsuda、H. Kawamura(1.Matsushita Electronics Corporation、2.Osaka University)
[6-3]Plasma Spread in High-Frequency Thyristors
Y. Terasawa(1.Hitachi, Ltd.)
[6-4]Memory Effect in CdSe Diodes
T. Nakau、M. Okuda、H. Nimura、H. Takenoshita(1.University of Osaka Prefecture)
[S-7]Device Technology
S. Namba、M. Yasufuku、I. Akasaki、T. Abe(1.Osaka University、2.Fujitsu Co., Ltd.、3.Matsushita Electric Industrial Co., Ltd.、4.Tokyo Shibaura Electric Co., Ltd.)
[7-1]Application of Radiation Enhanced Diffusion to Microwave Transistor Fabracations and Its Design Optimization
S. Yamamoto、T. Sakamoto、Y. Zohta、K. Mimura(1.Tokyo Shibaura Electric Co., Ltd.)
[7-2]Formation of Donor Center in Silicon by Hot Proton Irradiation
M. Konaka、T. Abe、Y. Nishi、H. Ohtsubo、Y. Ohmura、M. Kanazawa(1.Tokyo Shibaura Electric Co., Ltd.)
[7-3]Reverse Annealing Behavior of Boron- and Phosphorus-Implanted Silicon
N. Yoshihiro、T. Ikeda、M. Tamura、T. Tsuchimoto、T. Tokuyama(1.Hitachi Ltd.)
[7-4]Solid-to-Solid Diffusion of Sulfur into GaAs from Ga2S3 Source.
S. Asai、H. Kodera(1.Hitachi Ltd.)
[7-5]Masking Effect of Aluminium Oxide Layer against Diffusion of Zinc into Gallium Arsenide
K. Saito、E. Adachi、N. Sakurai(1.Hitachi Ltd.、2.Tokyo Atomic Industrial Research Laboratory, Ltd.)
[ES]Solid State Devices for New Memory Technology
H. Nishino(1.Electrotechnical Laboratory)
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