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フリーワード:

開催年:

1969〜2026

すべてのイベントから検索します。検索結果は最大1万件まで表示されます。

International Conference on Solid State Devices and Materials

検索条件

フリーワード:
開催年:1969〜2026

すべてのイベントから検索します。検索結果は最大1万件まで表示されます。

検索結果(10,000+)

検索結果が多いため、1万件まで表示しています。必要な検索結果が見つからない場合は、検索条件を指定して絞り込んでください。

[A-2-02]Impact of Ultrathin Oxygen-Passivated Interfacial Layer on Electron Mobility of MOSFETs in Scaled CET Regime

〇Yukinori Morita1,6, Takamasa Kawanago1,6, Takefumi Kamioka1,2,6, Yuichiro Mitani2,6, Toshihide Nabatame3,6, Takashi Onaya3,6, Naoki Fukata3,6, Wipakorn Jevasuwan3,6, Kazuhito Tukagoshi3,6, Takuya Hoshii4,6, Kasidit Toprasertpong5,6, Atsushi Tamura5,6, Koji Kita5,6, Naoya Okada1,6, Kenzo Manabe1,6, Wataru Mizubayashi1,6, Hiroyuki Ota1,6, Takashi Matsukawa1,6, Shinji Migita1,6(1. AIST (Japan), 2. Tokyo City Univ. (Japan), 3. NIMS (Japan), 4. Sci. Tokyo (Japan), 5. The Univ. Tokyo (Japan), 6. LSTC (Japan))

[A-3-03]Dual WFM Patterning in mCFET RMG: Understanding Patterning Limitations and Enabling Scalable Solutions

〇Camila Toledo de Carvalho Cavalcante1, Hiroaki Arimura1, Pallavi Puttarame Gowda1, Kenneth Lai1, Efrain Altamirano Sanchez1, Dmitry Batuk1, Thomas Chiarella1, Jerome Mitard1, Violeta Georgieva1, Harinarayanan Puliyalil1, Sujith Subramanian1, Lucas Petersen Barbosa Lima1, Steven Demuynck1, Naoto Horiguchi1, Serge Biesemans1(1. imec (Belgium))

[A-3-04]Flat-Band Voltage Control and Variability Using an Ultra-Thin Al2O3 Dipole Layer: Analysis of Dipole and Fixed Charges

〇Takefumi Kamioka1,6, Toshihide Nabatame2,6, Hiroki Matsukawa3,6, Takamasa Kawanago1,6, Yukinori Morita1,6, Kasidit Toprasertpong3,6, Yuichiro Mitani4,6, Takashi Onaya2,6, Naoki Fukata2,6, Wipakorn Jevasuwan2,6, Kazuhito Tsukagoshi2,6, Takuya Hoshii5,6, Atsushi Tamura3,6, Koji Kita3,6, Naoya Okada1,6, Kenzou Manabe1,6, Wataru Mizubayashi1,6, Hiroyuki Ota1,6, Takashi Matsukawa1,6, Shinji Migita1,6(1. AIST (Japan), 2. NIMS (Japan), 3. The Univ. of Tokyo (Japan), 4. Tokyo City Univ. (Japan), 5. Science Tokyo (Japan), 6. LSTC (Japan))

[A-5-01]Standard Cell Performance Improvement with Ultra Low Temperature (<350°C) SiGe:B GAA Si Nanosheet P-FET

〇Arka Dutta1, Ritam Sarkar1, Pierre Eyben1, Daniel Casey2, Hiroaki Arimura1, Thomas Chiarella1, Anabela Veloso1, Andrea Pondini1,3, Alexander Makarov1, Lynn Verschueren1, Hans Mertens1, Clement Porret1, Thomas Dursap1, Jishnu Ganguly1, Conor Cullen2, Rami Khazaka2, Min Soo Kim1, Lucas Petersen Barbosa Lima1, Jerome Mitard1, Serge Biesemans1, Naoto Horiguchi1(1. imec (Belgium), 2. ASM (Belgium), 3. KU Leuven (Belgium))

[A-5-02]Process Optimization of GAAFET CMOS for Leakage Current Reduction

〇Kazuya Uejima1, Atsushi Yagishita1, Naoto Kumagai1, Chia-Tsong Chen1, Masanaga Fukasawa1, Shutaro Asanuma1, Toshihiro Kamei1, Yuuki Ishida1, Naoya Okada1, Kenzo Manabe1, Yuji Kasashima1, Hiroki Tonegawa1, Shin Kono1, Tetsuya Ueda1, Motoharu Shichiri1, Ryutaro Nishino1, Yoko Tanaka1, Takahiro Goya1, Jun'ichi Hattori1, Yukinori Morita1, Toshifumi Irisawa1, Wataru Mizubayashi1, Hiroyuki Ota1, Fuminori Ito1, Takashi Matsukawa1, Yoshihiro Hayashi1(1. National Inst. of AIST (Japan))

[A-5-03]Insights into Ultra-Scaled Nanosheet FETs for the Angstrom Era

〇Anabela Veloso1, Ruben Asanovski1, Jeroen E. Scheerder1, Daniel Casey2, Conor Cullen2, Clement Porret1, Thomas Dursap1, Geert Eneman1, Felix Seidel1, Claudia Fleischmann1, Paola Favia1, Ritam Sarkar1, Arka Dutta1, Xiuju Zhou1, Anne Vandooren1, Roger Loo1, Rami Khazaka2, Naoto Horiguchi1(1. imec (Belgium), 2. ASM (Belgium))

[A-5-05]Sub-Nanometer Tomographic Imaging of Resistance, Carrier Distribution and Effective Gate Length in 45 nm Gate Pitch Nanosheet-FETs

〇Andrea Pondini1,2, Pierre Eyben2, Lennaert Wouters2, Hiroaki Arimura2, Thomas Chiarella2, Hans Mertens2, Arka Dutta2, Albert Minj2, Clement Porret2, Erik Rosseel2, Philippe Matagne2, Thomas Hantschel2, Naoto Horiguchi2, Jérôme Mitard2, Anne Verhulst1,2(1. KU Leuven (Belgium), 2. imec (Belgium))

[A-6-01 (Invited)]Material-Driven Device-Level Thermal Management Strategies

〇Chang-Seok Lee1, Taehoon Kim1, Jaewon Kim Kim1, Jae Hong Lee1, Yoonhoo Ha1, Woochang Lee1(1. Samsung Advanced Institute of Tech. (Korea))

[A-6-02]Overlay and Grid Distortion Control in the Fabrication of Bonded CFET devices

〇Rajendra Kumar Saroj1, Andrea Mingardi1, Teresa Rodrigues1, Koen D'have1, Sandip Halder1, Hans Mertens1, Camila Cavalcante1, Hung-Chieh Tsai1, Serena Iacovo1, Steven Brems1, Min-Soo Kim1, Steven Demuynck1, Lucas Petersen Barbosa Lima1, Naoto Horiguchi1, Serge Biesemans1(1. IMEC (Belgium))

[A-6-04]Ultra-Doped In-Situ Si:P Raised S/D for performance improvement in view of 10 nm FD-SOI nMOSFETs

〇Krunoslav Romanjek1, Blend Mohamad1, Joël Kanyandekwe1, Zdenek Chalupa1, Micaël Charbonneau1, Valérie Lapras1, Théo Cabaret1, Tadeu Mota-Frutuoso1, Wissem Baik1, Fabien Bringuier1, Laurent Brévard1, Alexandre Magalhaes-Lucas1, Marie-Claire Cyrille1, Claire Fenouillet-Beranger1(1. Univ. Grenoble Alpes, CEA, Leti, F-38000 Grenoble, France (France))

[A-8-01 (Invited)]TBD

〇Ken Uchida1(1. The Univ. of Tokyo (Japan))

[A-8-02]Temperature Detection utilizing Superconducting Transition Temperature for Characterizing the Self-heating of Cryo-CMOS

〇Takumi Inaba1, Hidehiro Asai1, Tomoki Kashiwagi1,2, Takumi Katorhi1,3, Hiroshi Oka1, Kimihiko Kato1, Shota Iizuka1, Takashi Nakayama1, Satoshi Moriyama3, Takahiro Mori1(1. National Institute of Advanced Industrial Science and Technology (Japan), 2. Chuo University (Japan), 3. Tokyo Denki University (Japan))

[A-8-03]Quantitative Representation of High-Ns Mobility in (100) Si n-MOSFETs at 4 K: Combined Effects of Multi-Subband Occupation, Surface Roughness, and Coulomb Scattering

〇Shinichi Takagi1, Kei Sumita2, Zhao Jin2, Yutong Chen2, Hiroshi Oka3, Takahiro Mori3, Mitsuru Takenaka2, Kasidit Toprasertpong2(1. Teikyo Univ. (Japan), 2. The Univ. of Tokyo (Japan), 3. Nat. Inst. Adv. Indus. Sci. and Tech. (AIST) (Japan))

[B-1-03]Oxygen Vacancy Dynamics Governing Wake-Up and Fatigue
in Ferroelectric HfO2 Capacitors Revealed by Depth-Resolved HAXPES

〇Hideaki Tanimura1,2, Tomoya Mifune1, Yuma Ueno2, Yusuke Tani2, Hironori Fujisawa1, Seiji Nakashima1, Ai Isohashi Osaka1, Yasumasa Takagi3, Akira Yasui3, Jiayi Tang3, Shinichi Kato2, Takumi Mikawa2(1. Univ. of Hyogo (Japan), 2. SCREEN Semiconductor Solutions (Japan), 3. JASRI (Japan))

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