[2] Session 2 (B. Inorganic Materials and Devices for Electronics)

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[2-01] Pattern recognition enhancement of HfZrO₂ ferroelectric tunnel junctions with NH₃-plasma-treated ALD TiN bottom electrode

*Kuan-Lin Chen¹, Jun-Kai Lai¹, Bo-Ru Lu¹, Jer-Chyi Wang^1,2,3 (1. Chang Gung Univ. (Taiwan), 2. Chang Gung Memorial Hospital (Taiwan), 3. Ming Chi Univ. of Tech. (Taiwan))

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