[2] Session 2 (B. Inorganic Materials and Devices for Electronics) | EM-NANO2025

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B. Inorganic Materials and Devices for Electronics

[2]Session 2 (B. Inorganic Materials and Devices for Electronics)

Thu. Jun 12, 2025 2:00 PM - 3:45 PM JST
Thu. Jun 12, 2025 5:00 AM - 6:45 AM UTC

Sub-hall(6th Floor)

Chairs: Yong Yang (Shanghai Inst. of Ceramics), Mary Clare Escaño (Univ. of Fukui)

2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[2-01]Pattern recognition enhancement of HfZrO₂ ferroelectric tunnel junctions with NH₃-plasma-treated ALD TiN bottom electrode

*Kuan-Lin Chen¹, Jun-Kai Lai¹, Bo-Ru Lu¹, Jer-Chyi Wang^1,2,3 (1. Chang Gung Univ. (Taiwan), 2. Chang Gung Memorial Hospital (Taiwan), 3. Ming Chi Univ. of Tech. (Taiwan))

2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)

[2-02]Piezoelectric properties of polymorphic phase region in (Ba,Ca)(Ti,Sn)O₃ ceramics

*Hideki Hashimoto¹, Asami Yonezawa¹, Tohru Sekino² (1. Sanjo City Univ. (Japan), 2. The Univ. of Osaka (Japan))

2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[2-03]EELS study on the relationship between oxygen deficiency sites and transition temperature of YBCO

*Xiaopeng Liu¹, Jiqiang Jia², Yoshifumi Oshima¹ (1. JAIST (Japan), 2. Xi’an Univ. of Tech. (China))

2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[2-04]Dynamically varying resistances of silicon dioxide nanofilms and their potential for chaos-based secure communication

*Seiichi Sato¹, Kosei Ando¹, Takeru Suzuki¹, Ritsuko Eguchi¹, Takahisa Ichinohe² (1. Univ. of Hyogo (Japan), 2. NIT, Tokyo College (Japan))

3:00 PM - 3:15 PM JST(6:00 AM - 6:15 AM UTC)

[2-05]Bias voltage dependence of the performance of polarization-sensitive photodiode using dilute nitride GaNAs

*Daiki Mineyama¹, Kaito Nakama¹, Hidetoshi Hashimoto¹, Keisuke Minehisa¹, Junichi Takayama¹, Agus Subagyo¹, Kazuhisa Sueoka¹, Fumitaro Ishikawa¹, Akihiro Murayama¹, Satoshi Hiura¹ (1. Hokkaido Univ. (Japan))

3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)

[2-06]Photoluminescence dynamics in a GaAs multiple quantum wells under resonant excitation condition

*Koki Hayashi¹, Takuya Matsuda¹, Norihiko Sekine², Hajime Ishihara¹, Masaaki Ashida¹ (1. The Univ. of Osaka (Japan), 2. NICT (Japan))

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[2-07]Investigation of the birefringence in grown spherulite-like GeS thin films

*Qinqiang Zhang¹, Ryo Matsumura¹, Naoki Fukata^1,2 (1. NIMS (Japan), 2. Univ. of Tsukuba (Japan))

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