[9] Session 9 (D3. Wide Bandgap Materials and Devices)

4:40 PM - 5:10 PM JST(7:40 AM - 8:10 AM UTC)

[9-01] [Invited] AlN for ultra-wide bandgap based power electronics

C. E. Quiñones¹, P. Bagheri¹, D. Khachariya², S. Rathkanthiwar¹, R. Kirste², P. Reddy², S. Mita², E. Kohn¹, *Ramon Collazo1, Z. Sitar^1,2 (1. North Carolina State Univ. (United States of America), 2. Adroit Materials, Inc. (United States of America))

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