[9] Session 9 (D3. Wide Bandgap Materials and Devices) | EM-NANO2025

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D3. Wide Bandgap Materials and Devices

[9]Session 9 (D3. Wide Bandgap Materials and Devices)

Fri. Jun 13, 2025 4:40 PM - 6:40 PM JST
Fri. Jun 13, 2025 7:40 AM - 9:40 AM UTC

Main Hall(8th Floor)

Chairs: Joel T. Asubar (Univ. of Fukui), Dagmar Gregušová (Slovak Academy of Sci.)

4:40 PM - 5:10 PM JST(7:40 AM - 8:10 AM UTC)

[9-01][Invited] AlN for ultra-wide bandgap based power electronics

C. E. Quiñones¹, P. Bagheri¹, D. Khachariya², S. Rathkanthiwar¹, R. Kirste², P. Reddy², S. Mita², E. Kohn¹, *Ramon Collazo1, Z. Sitar^1,2 (1. North Carolina State Univ. (United States of America), 2. Adroit Materials, Inc. (United States of America))

5:10 PM - 5:40 PM JST(8:10 AM - 8:40 AM UTC)

[9-02][Invited] Critical issues and limitations in p-GaN HEMTs technology

*Giuseppe Greco¹, P. Fiorenza¹, S. Milazzo¹, F. Giannazzo¹, G. Giorgino², C. Miccoli², E. Castagna², F. Iucolano², F. Roccaforte¹ (1. IMM, National Research Council of Italy (Italy), 2. STMicroelectronics (Italy))

5:40 PM - 5:55 PM JST(8:40 AM - 8:55 AM UTC)

[9-03]Wavelength dependence of photoluminescence lifetime in InGaN quantum wells with different alloy composition

*Ririka Yamagata¹, Itsuki Shimbo¹, Atsushi A. Yamaguchi¹, Kazunori Iwamitsu², Shigetaka Tomiya² (1. Kanazawa Inst. of Tech. (Japan), 2. NAIST (Japan))

5:55 PM - 6:10 PM JST(8:55 AM - 9:10 AM UTC)

[9-04]Importance of Mg diffusion process in realizing p-channel GaN FinFETs on low-doped p-GaN films

*Simranjit Singh¹, Manuel Fregolent², Lu Shun³, Jia Wang³, Hirotaka Watanabe³, Carlo De Santi², Gaudenzio Meneghesso², Enrico Zanoni², Matteo Meneghini², Yoshio Honda³, Hiroshi Amano³, Biplab Sarkar¹ (1. IIT Roorkee (India), 2. Univ. of Padova (Italy), 3. Nagoya Univ. (Japan))

6:10 PM - 6:25 PM JST(9:10 AM - 9:25 AM UTC)

[9-05]Enhancing β-Ga₂O₃-diamond integration for high-power electronics: Thermal and mechanical performance of SiC and SiO₂ interlayers

*Javad Keshtkar¹, Filip Gucmann¹, Marián Varga¹, Ondrej Szabó², Kateřina Aubrechtová Dragounová², Kristína Hušeková¹, Peter Eliáš¹, Edmund Dobročka¹, Ján Fedor¹, Tomáš Ščepka¹, Andrii Kozak¹, Ildikó Cora³, Xiaoyang Ji⁴, James W. Pomeroy⁴, Martin Kuball⁴, Martin Truchlý⁵, Marián Mikula⁵, Alexander Kromka², Milan Ťapajna¹ (1. Slovak Academy. of Sci. (Slovakia), 2. Czech Academy of Sci. (Czech Republic), 3. HUN-REN Centre of Energy Research (Hungary), 4. Univ. of Bristol (UK), 5. Comenius Univ. in Bratislava (Slovakia))

6:25 PM - 6:40 PM JST(9:25 AM - 9:40 AM UTC)

[9-06]Understanding the reduced current collapse in Schottky-gate AlGaN/GaN HEMTs with vanadium-based metal stack ohmic contact

*Naeemul Islam¹, Takahiro Igarashi¹, Kishi Sekiyama¹, Suguru Terai¹, Shundai Yamao ¹, Shogo Maeda¹, Ali Baratov ¹, Masaaki Kuzuhara², Joel T. Asubar¹ (1. Univ. of Fukui (Japan), 2. Kwansei Gakuin Univ. (Japan))

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