[9] Session 9 (D3. Wide Bandgap Materials and Devices)

5:10 PM - 5:40 PM JST(8:10 AM - 8:40 AM UTC)

[9-02] [Invited] Critical issues and limitations in p-GaN HEMTs technology

*Giuseppe Greco¹, P. Fiorenza¹, S. Milazzo¹, F. Giannazzo¹, G. Giorgino², C. Miccoli², E. Castagna², F. Iucolano², F. Roccaforte¹ (1. IMM, National Research Council of Italy (Italy), 2. STMicroelectronics (Italy))

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