[9] Session 9 (D3. Wide Bandgap Materials and Devices)

5:40 PM - 5:55 PM JST(8:40 AM - 8:55 AM UTC)

[9-03] Wavelength dependence of photoluminescence lifetime in InGaN quantum wells with different alloy composition

*Ririka Yamagata¹, Itsuki Shimbo¹, Atsushi A. Yamaguchi¹, Kazunori Iwamitsu², Shigetaka Tomiya² (1. Kanazawa Inst. of Tech. (Japan), 2. NAIST (Japan))

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