[9] Session 9 (D3. Wide Bandgap Materials and Devices)

5:55 PM - 6:10 PM JST(8:55 AM - 9:10 AM UTC)

[9-04] Importance of Mg diffusion process in realizing p-channel GaN FinFETs on low-doped p-GaN films

*Simranjit Singh¹, Manuel Fregolent², Lu Shun³, Jia Wang³, Hirotaka Watanabe³, Carlo De Santi², Gaudenzio Meneghesso², Enrico Zanoni², Matteo Meneghini², Yoshio Honda³, Hiroshi Amano³, Biplab Sarkar¹ (1. IIT Roorkee (India), 2. Univ. of Padova (Italy), 3. Nagoya Univ. (Japan))

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