[9] Session 9 (D3. Wide Bandgap Materials and Devices)

6:25 PM - 6:40 PM JST(9:25 AM - 9:40 AM UTC)

[9-06] Understanding the reduced current collapse in Schottky-gate AlGaN/GaN HEMTs with vanadium-based metal stack ohmic contact

*Naeemul Islam¹, Takahiro Igarashi¹, Kishi Sekiyama¹, Suguru Terai¹, Shundai Yamao ¹, Shogo Maeda¹, Ali Baratov ¹, Masaaki Kuzuhara², Joel T. Asubar¹ (1. Univ. of Fukui (Japan), 2. Kwansei Gakuin Univ. (Japan))

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