Presentation Information
[P3-40]Precise temperature measurement assuming Ⅲ-Ⅴcompound semiconductor single crystal growth by vertical Bridgman method
*Daichi Takagi1, Toshinori Taishi1, Koichiro Aoyama2 (1. Shinshu Univ. (Japan), 2. Sumitomo Electric Semiconductor Materials, Inc. (Japan))