[P3] Poster Session 3 | EM-NANO2025

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Poster Session

[P3]Poster Session 3

Sat. Jun 14, 2025 12:00 PM - 2:00 PM JST
Sat. Jun 14, 2025 3:00 AM - 5:00 AM UTC

Poster Session (8th Floor)

[P3-01]Hand-written digit image recognition using two parallelized gold-nanoparticle reservoirs

Yuki Hayashi¹, Hiroshi Shimada¹, *Yoshinao Mizugaki¹ (1. The Univ. of Electro-Communications (Japan))

[P3-02]Electrostatic adhesion device capable of curved surface attachment

*Eiichiro Kikuchi¹, Satomitsu Imai¹ (1. Nihon Univ. (Japan))

[P3-03]Effect of light irradiation on the electrolyzed-water neutralizing battery utilizing ZnO:Al/TiO₂ cathode

*Jumpei Yamashita¹, Myo Than Htay Yamamoto¹, Yoshio Hashimoto¹ (1. Shinshu Univ. (Japan))

[P3-04]Design of molecular quantum-dot cellular automata using simple model

*Ken Tokunaga¹, Yasunori Ando¹, Takumi Hiramatsu¹, Hayate Ando¹ (1. Kogakuin Univ. (Japan))

[P3-05]X-ray response properties for Yb-doped Ca₃TaGa₃Si₂O₁₄ crystals with near-infrared luminescence

*Ryosei Takahashi¹, Kai Okazaki¹, Daisuke Nakauchi¹, Takumi Kato¹, Noriaki Kawaguchi¹, Takayuki Yanagida¹ (1. NAIST (Japan))

[P3-06]Liquid-induced structural modification of azo particles irradiated by light

*Yusuke Fujimoto¹, Tatsuki Inoue¹, Shogo Muramatsu¹, Kazunari Shinbo¹, Yasuo Ohdaira¹ (1. Niigata Univ. (Japan))

[P3-07]An ultra-sensitive label-free magnetic enrichment SERS technologies for detection of SARS-CoV-2 variants and construction of Raman databas

*Yusi Peng¹, Dan Li ^1,2, Yanyan Li ³, Shuai Zhao ^1,2, Meimei Xu ^1,2, Weida Zhang^1,2, Masaki Tanemura⁴, Yong Yang^1,2 (1. Shanghai Inst. of Ceramics, Chinese Academy of Sci. (China), 2. Univ. of Chinese Academy of Sci. (China), 3. The Univ. of Hong Kong (China), 4. Nagoya Inst. of Tech. (Japan))

[P3-08]Core-shell heteroarchitectures of Al-catalyzed Si nanowire/Ge and their hole gas accumulation enhancement for transistor applications

*Wipakorn Jevasuwan¹, Naoki Fukata¹ (1. NIMS (Japan))

[P3-09]Neutron detection characteristics of solar cell neutron dosimeter using converter film by screen-printing

*Tamotsu Okamoto¹, Ayuto Kobayashi¹, Yuji Kurimoto¹, Yasuki Okuno², Tomohiro Kobayashi² (1. NIT, Kisarazu College (Japan), 2. RIKEN (Japan))

[P3-10]Charge and discharge characteristics of bipolar batteries with layered double hydroxides

*Rintaro Kagawa¹, Hikaru Sugihara¹, Satoshi Ogawa¹ (1. Suwa Univ. of Sci. (Japan))

[P3-11]Crystal growth of n-type organic semiconductor based on perylene derivative in planarly aligned nematic liquid crystal as a solvent

*Saho Ohtani¹, Yosei Shibata¹, Munehiro Kimura¹ (1. Nagaoka Univ. of Tech. (Japan))

[P3-12]Preparation of hydrogen-doped chromium nitride (CrN:H) thin films

*Koma Tashiro¹, Shu Sawaya¹, Khairul Abrar Bin Onn¹, Tsuneo Suzuki¹ (1. Nagaoka Univ. of Tech. (Japan))

[P3-13]Formation of Mott-Hubbard gap by substitutional solid solution of MnN in CrN

*Hiroaki Kato¹, Shu Sawaya¹, Tsuneo Suzuki¹ (1. Nagaoka Univ. of Tech. (Japan))

[P3-14]Standard sample for measuring low oxygen concentration in thin films using resonance nuclear reactions

*Naoki Nagashima¹, Tsuneo Suzuki¹ (1. Nagaoka Univ. of Tech. (Japan))

[P3-15]Human IgG biosensor based on a solution-gated P3HT FET

*Reaksmey Ek¹, Layheng Chea¹, Akira Baba¹, Kazunari Shinbo¹ (1. Niigata Univ. (Japan))

[P3-16]Evaluation of polypyrrole thin film electrodeposition utilizing a hybrid sensor of surface plasmon resonance and quartz crystal microbalance

Reaksmey Ek,¹, Ruo Obuchi¹, Yasuo Ohdaira¹, Akira Baba¹, *Kazunari Shinbo¹ (1. Niigata Univ. (Japan))

[P3-17]Development of organic photovoltaics for bluetooth beacons operating under low-temperature conditions

*Hiroya Ota¹, Takumi Shoji¹, Akihiro Konishi¹, Md. Shahiduzzaman¹, Tetsuya Taima¹, Makoto Karakawa¹, Tetsuya Iwabuchi², Kazumi Yoshida², Tatsuya Arashitani³, Shiro Ikuhara³, Kouzou Kotani³, Koshin Takahashi³, Masahiro Nakano¹ (1. Kanazawa Univ. (Japan), 2. BME Inc. (Japan), 3. Reiko Co., Ltd. (Japan))

[P3-18]Development of plastic scintillators containing 9,9-dimethylfluorene to achieve high scintillation light yields

*Taiyo Kanenari¹, Masanori Koshimizu¹ (1. Shizuoka Univ. (Japan))

[P3-19]Elemental analysis of Indonesian volcanic ash by CO₂-laser induced breakdown spectroscopy (CO₂-LIBS)

*Souta Imanishi¹, Takumi Uemaru¹, Souta Nakagawa¹, Riki Mitsuya¹, Ali Khumaeni², Kazuyoshi Kurihara¹ (1. Univ. of Fukui (Japan), 2. Diponegoro Univ. (Indonesia))

[P3-20]Quantification of current fluctuation behavior on a non-volatile memory device by image classification using convolutional neural networks

*Mitsuhiro Okada¹, Takatoshi Yamada¹, Takeo Yamada¹ (1. AIST (Japan))

[P3-21]Effect of atmospheric absorption for negative-illumination photovoltaic effect with terrestrial radiation

*Toru Matsuura¹, Ayuki Yoshimatsu¹, Riku Shimizu¹, Masakazu Arakawa¹ (1. NIT, Fukui College (Japan))

[P3-22]Electrical and optical properties of (Ti_1-x,Yb_x)N thin films

*Khairul Abrar Bin Onn¹, Daiki Shimbori¹, Tsuneo Suzuki¹ (1. Nagaoka Univ. of Tech. (Japan))

[P3-23]Electrical contacts for semiconductor devices based on 2D materials

*Dagmar Gregušová¹, Ondrej Pohorelec¹, Milan Ťapajna¹, Jana Hrdá¹, Andrii Kozak¹, Martin Hulman¹, Matúš Maťko², Viliam Vretenár², Michaela Sojková¹ (1. Slovak Academy of Sci. (Slovakia), 2. Slovak Univ. of Tech. (Slovakia))

[P3-24]Realization of micro-antennas using conductive polymers

*Ayumu Suzuki¹, Fukuro Koshiji¹, Katsumi Yamada¹ (1. Tokyo Polytechnic Univ. (Japan))

[P3-25]Measurement of intrinsic "electro-responsivity" of GaSe induced by high-energy electron irradiation

*Mai Nakashima¹, Limi Chen¹, Kohei Aso¹, Yukiko Yamada-Takamura¹, Yoshifumi Oshima¹ (1. JAIST (Japan))

[P3-26]Enhanced electron emission from heavily nitrogen-doped diamond films under visible light irradiation

*Ryo Ishikawa¹, Kimiyoshi Ichikawa¹, Takao Inokuma¹, Kan Hayashi¹, Satoshi Yamasaki¹, Tsubasa Matsumoto¹, Taro Yoshikawa^1,2, Norio Tokuda¹ (1. Kanazawa Univ. (Japan), 2. Daicel Corp. (Japan))

[P3-27]XRD characterization of conductive fillers made of gold and silver leaves

*Jikai Hu¹, Keitaro Eguchi¹, Hideyuki Murata¹ (1. JAIST (Japan))

[P3-28]Storage of interhalogen compounds on single- and double- layered graphene nanoflake: A density functional theory (DFT) study

Mahdis Nesabi¹, Sirus Safaee¹, Teng Ge¹, Qi Yin¹, Alireza Valanezhad¹, Yuko Era², *Shigeaki Abe¹, Mariko Nakamura³, Teruo Kusaka⁴, Ikuya Watanabe¹, Hiroto Tachikawa⁴ (1. Nagasaki Univ. (Japan), 2. Saitama Prefectural Univ. (Japan), 3. Kyushu Univ. of Medical Sci. (Japan), 4. Hokkaido Univ. (Japan))

[P3-29]Effects of synthesis time on microstructural and optical properties of CuSbS₂ powders prepared by polyol method

Ryusei Omori¹, *Yasuhiro Shirahata^2,1, Michio Mikawa¹, Takashi Kawakubo¹, Hideaki Araki³ (1. NIT, Kagawa College (Japan), 2. Kagawa Univ. (Japan), 3. NIT, Nagaoka College (Japan))

[P3-30]Hydrophilic/hydrophobic patterning for controlling droplet dynamics

Shintaro Tsuda¹, Yih-Ren Chang¹, Masatoshi Kitamura¹, *Yoshiaki Hattori¹ (1. Kobe Univ. (Japan))

[P3-31]Diamond heteroepitaxy on Ni (111) substrate using diamond powder as nucleus

*Tatsumu Sasaki¹, Kimiyoshi Ichikawa¹, Kan Hayashi¹, Taro Yoshikawa¹, Satoshi Yamasaki¹, Takao Inokuma¹, Tsubasa Matsumoto¹, Taiga Asai², Norio Tokuda¹ (1. Kanazawa Univ. (Japan), 2. Shin-Etsu Chemical Co., Ltd. (Japan))

[P3-32]A new tender XAFS system for characterization of organic thin films at SAGA light source

*Hiroyuki Setoyama¹, Takeshi Watanabe², Masahide Kawamoto¹, Ichiro Hirosawa¹ (1. SAGA-LS (Japan), 2. JASRI (Japan))

[P3-33]Enhanced NV center generation in CVD diamond grown on patterned Ti films

*Shuta Niimi¹, Yuto Nakamura¹, Akihiro Koike¹, Kimiyoshi Ichikawa¹, Taro Yoshikawa¹, Tsubasa Matsumoto¹, Takao Inokuma¹, Satoshi Yamasaki¹, Norio Tokuda¹, Kan Hayashi¹ (1. Kanazawa Univ. (Japan))

[P3-34]Post-annealing effect in p-channel thin-film transistors with SnO_x as the channel layer

*Motonori Taki¹, Yoshiaki Hattori¹, Masatoshi Kitamura¹ (1. Kobe Univ. (Japan))

[P3-35]Development of N-channel organic field-effect transistors with pyridine derivative electron injection layers

Masahiro Minagawa¹, *Tohki Koike¹, Reiji Shimobe¹, Kazunari Shinbo² (1. NIT, Nagaoka College (Japan), 2. Niigata Univ. (Japan))

[P3-36]Magnetic domain of yttrium iron garnet single crystal

Tsuyoshi Satoh¹, Yuta Miyazawa², Shin Iwamoto², Soobeom Lee², Toshinori Taishi², *Xiaoxi Liu² (1. Carlit Co., Ltd. (Japan), 2. Shinshu Univ. (Japan))

[P3-37]Fabrication of electron transport layer material by electrospray for the development of fibrous perovskite solar cells

*Kensei Ueyama¹, Shunki Kushida¹, Shinnosuke Sakai¹, Yusuke Ichino¹, Tatsuo Mori¹, Noriyuki Taoka¹, Taishi Segawa², Ryosuke Usui², Keiji Miyachi², Yoshiyuki Seike^1,3 (1. Aichi Inst. of Tech. (Japan), 2. Asahi Sunac Corp. (Japan), 3. la quaLab LLC. (Japan))

[P3-38]First principles study of graphene and related 2D materials in quantum capacitance

*Ahmad Sohib¹, Naoya Yamaguchi¹, Fumiyuki Ishii¹ (1. Kanazawa Univ. (Japan))

[P3-39]Photon-controlled optical switching devices

*Chikaya Hirabayashi¹, Hiroyuki Okada¹ (1. Univ. of Toyama (Japan))

[P3-40]Precise temperature measurement assuming Ⅲ-Ⅴcompound semiconductor single crystal growth by vertical Bridgman method

*Daichi Takagi¹, Toshinori Taishi¹, Koichiro Aoyama² (1. Shinshu Univ. (Japan), 2. Sumitomo Electric Semiconductor Materials, Inc. (Japan))

[P3-41]Sodium distribution process in devitrification of Cl-containing silica glass

*Naohiro Horii¹, Shiho Sakaguchi¹, Nobu Kuzuu², Hideharu Horikoshi³ (1. NIT, Fukui College (Japan), 2. Univ. of Fukui (Japan), 3. Tosoh SGM Corp. (Japan))

[P3-42]Investigation on nonselective etchant for β-Ga₂O₃ crystals

*Aoi Otsuka¹, Taro Tsukada¹, Toshinori Taishi¹ (1. Shinshu Univ. (Japan))

[P3-43]Observation of dislocations generated at the seeding interface in Czochralski (CZ) Si single crystal growth

*Shoma Tsukada¹, Hiroki Tsukada¹, Rintaro To¹, Takeshi Hoshikawa¹, Hiroyuki Saito², Hisashi Matsumura^1,2, Toshinori Taishi¹ (1. Shinshu Univ. (Japan), 2. GlobalWafers Japan Co., Ltd. (Japan))

[P3-44]Thickness-dependent thermoelectric properties of CaGe₂ thin films: A first-principles study

*Ahmad Al Ghiffari¹, Rifky Syariati¹, Yume Morishima¹, Naoya Yamaguchi¹, Fumiyuki Ishii¹ (1. Kanazawa Univ. (Japan))

[P3-45]Vapor phase SiC crystal growth by Si evaporation technique

*Takumi Hoshina¹, Taisei Horiuchi¹, Toshinori Taishi¹ (1. Shinshu Univ. (Japan))

[P3-46]Vacuum referred binding energy (VRBE) analysis of anomalous yellow afterglow in β-Sr₂SiO₄:Eu, Dy

Homare Toyota¹, Kodai Tamaki¹, Takuro Arima¹, Masato Ishikawa², *Ariyuki Kato¹ (1. Nagaoka Univ. of Tech. (Japan), 2. Chiba Univ. (Japan))

[P3-47]Solution growth of β-Ga₂O₃ using MoO₃ based flux

*Kentaro Ishida¹, Yoshiki Kasai¹, Toshinori Taishi¹ (1. Shinshu Univ. (Japan))

[P3-48]Evaluation on mechanical strength of β-Ga₂O₃ single crystals grown by the VB method using nanoindentation

*Ryuta Ogawa¹, Toshinori Taishi¹ (1. Shinshu Univ. (Japan))

[P3-49]Relationship between additive impurities and formation of electron traps in SrAl₂O₄:Eu,Dy phosphors

*Shuto Sugito¹, Takumi Shinogi¹, Haruki Fukata¹, Atsushi A. Yamaguchi¹ (1. Kanazawa Inst. of Tech. (Japan))

[P3-50]Induction of chirality in polydiacetylene using evanescent waves

*Hongfei Sun¹, Feng Wei¹, Dai Taguchi¹, Takaaki Manaka¹ (1. Science Tokyo (Japan))

[P3-51]Effect of Ag/Sn ratio for Ag-rich Ag₈SnS₆ thin films prepared by sulfurization process

*Yoji Akaki¹, Tomohiro Uchimura², Shigeyuki Nakamura³, Hideaki Araki⁴ (1. NIT, Miyakonojo College (Japan), 2. Tohoku Univ. (Japan), 3. NIT, Tsuyama College (Japan), 4. NIT, Nagaoka College (Japan))

[P3-52]Preparation and evaluation of InP quantum dot thin films by electrostatic spraying deposition method

*Ryotaro Noguchi¹, Koshi Nishiguchi¹, Naoki Ohtani¹ (1. Doshisha Univ. (Japan))

[P3-53]Optimization of a focused ion beam milling for a nitrogen-vacancy center diamond pillar probe fabrication

*Akito Fukuoka¹, Shunsuke Uesugi¹, Kunitaka Hayashi¹, Dwi Prananto¹, Toshu An¹ (1. JAIST (Japan))

[P3-54]Wide control of 3D QD density by SML growth: Experiments and modeling

*Ronel Christian Intal Roca¹, Itaru Kamiya¹ (1. Toyota Tech. Inst. (Japan))

[P3-55]Energy gap evaluation of Si nanoparticles surface terminated with hydrophilic organic molecules

*Taisei Matsushita¹, Yuichi Ota¹, Hitoshi Mizuno¹, So Ito¹, Kazuhide Kamiya¹, Kimihisa Matsumoto¹ (1. Toyama Prefectural Univ. (Japan))

[P3-56]Analysis of Cu₂SnS₃ thin film solar cells by photoluminescence

*Ryodai Ichihara¹, Ayaka Kanai¹, Soichiro Saito², Hideaki Araki², Kunihiko Tanaka¹ (1. Nagaoka Univ. of Tech. (Japan), 2. NIT, Nagaoka College (Japan))

[P3-57]First-principles study on anomalous Nernst effect in ferromagnetic CrGeTe₃ thin film

Kaiki Shibata¹, Edi Suprayoga², Rifky Syariati^{1, 2}, Naoya Yamaguchi¹, *Fumiyuki Ishii¹ (1. Kanazawa Univ. (Japan), 2. BRIN (Indonesia))

[P3-58]Development of a scanning NV probe microscope with multiple near-surface NV centers

*Shunsuke Uesugi¹, Akito Fukuoka¹, Kunitaka Hayashi¹, Dwi Pranato¹, Shinobu Onoda², Toshu An¹ (1. JAIST (Japan), 2. QST (Japan))

[P3-59]Fabrication and characteristics of transparent position sensitive detector using Al-doped ZnO and Ga-doped SnO₂ thin films through Ga doptin

*Yamato Ono¹, Hirotake Kajii², Michio Mikawa¹, Touya Takeuchi¹, Hiroshi Murakami¹, Kunihiko Tanaka³, Taichiro Morimune¹ (1. NIT, Kagawa College (Japan), 2. The Univ. of Osaka (Japan), 3. Nagaoka Univ. of Tech. (Japan))

[P3-60]Fabrication of single crystalline Fe₃O₄ films on graphene

Shodai Iwasaki¹, Eko Ishihara¹, Kazuhisa Sueoka¹, *Agus Subagyo¹ (1. Hokkaido Univ. (Japan))

[P3-61]Development of simultaneous detection method of electrically-detected and conventional electron spin resonance signals of phosphorous-doped silicon at very low temperatures

*Yuta Shimizu¹, Hayato Ito¹, Akinori Ohashi¹, Yutaka Kurachi¹, Kanata Hayashi¹, Yuya Ishikawa¹, Akira Fukuda², X. -F. Liu³, G. M. Gabriel³, Masayoshi Mori³, Akira Oiwa³, Yutaka Fujii¹ (1. Univ. of Fukui (Japan), 2. Hyogo Medical Univ. (Japan), 3. The Univ. of Osaka (Japan))

[P3-62]Enhanced acetone gas sensing performance of spherical tungsten trioxide nanorods decorated with nitrogen-doped reduced graphene oxide

*Feng-Renn Juang¹, Dong-Ting Lin¹ (1. National Sun Yat-sen Univ. (Taiwan))

[P3-63]Site-selected fabrication of MoS₂ transistor by direct sulfurization of pre-patterned Mo films

Koki Nakane¹, Kazushi Inoue¹, Yuto Kimura¹, Kazuhisa Sueoka¹, *Agus Subagyo¹ (1. Hokkaido Univ. (Japan))

[P3-64]Fabrication of a stripline printed on a thin film for force-detection ENDOR measurement

*Ryosuke Onogi¹, Yuya Ishikawa¹, Hideyuki Takahashi², Eiji Ohmichi³, Konami Izumi⁴, Hirobumi Ushijima⁴, Yutaka Fujii¹ (1. Univ. of Fukui (Japan), 2. Technoassist Corp. (Japan), 3. Kobe Univ. (Japan), 4. AIST (Japan))

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