General Conference of the Institute of Electronics, Information and Communication Engineers
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Presentation Information

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Candidate for Academic Incentive Award

[C-10-07](Invited Presentation) High-temperature isolation characteristics of separated GaN mesas on diamond substrates fabricated using the surface-activated bonding and dry etching

◎Yosei Sunamoto1, Tetsuya Suemitsu2, Takehiro Shimaoka3, Hideaki Yamada3, Jianbo Liang1, Naoteru Shigekawa1 (1. Osaka Metropolitan Univ., 2. Tohoku Univ., 3. AIST)

Keywords:

surface-activated bonding,Gallium Nitride,diamond,isolation characteristics

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