Session Details

[C-10]Electron Devices

Thu. Mar 12, 2026 9:00 AM - 12:00 PM JST
Thu. Mar 12, 2026 12:00 AM - 3:00 AM UTC
Building 1 5F N505(Kyushu Sangyo University)
Chair:MASATOSHI KOYAMA(Osaka Institute of Technology), Tomohiro Yoshida(Sumitomo Electric Device Innovations. Inc)

[C-10-01](依頼講演)酸化パラジウムを堆積した酸化亜鉛薄膜トランジスタの水素応答

〇Kaito Otsuka1, Ryo Miyazawa1, Masanori Miura1, Fumihiko Hirose1 (1. Yamagata Univ.)

[C-10-02]Reliability Improvement of Signal Readout Circuits for TFT Image Sensors

〇Hiroki Kobayashi1, Koki Imamura1, Masahide Goto1, Hiroto Sato1 (1. NHK Science & Technology Research Laboratories)

[C-10-03]Printed Spiral InductorとFlexible Printed Spiral Inductorを用いた交角センサの形状による性能の比較

◎Yusuke Inoue1, Yamauchi Masayuki1 (1. Hiroshima Institute of Technology)

[C-10-04]Development of a Simulator for Calculating Self-Inductance of Bendable Flexible Printed Spiral Inductors

〇Takuya Morishige1, Masayuki Yamauchi1 (1. Hiroshima Institute of Technology)

[C-10-05]Method for Measuring Silicon Quantum Dots with TMR Sensor

〇Seiji Komatsu1, Takayuki Kawahara1 (1. Tokyo University of Science)

[C-10-06]Study on Machine Learning Technique for Ground Condition Perception in an Amoeba-inspired Four-legged Walking Robot

〇Hyoto Yamaguchi1,2, Zenji Yatabe1,2, Seiya Kasai1,2 (1. RCIQE, Hokkaido Univ., 2. Graduate School of IST, Hokkaido Univ.)

Break time

[C-10-07](Invited Presentation) High-temperature isolation characteristics of separated GaN mesas on diamond substrates fabricated using the surface-activated bonding and dry etching

◎Yosei Sunamoto1, Tetsuya Suemitsu2, Takehiro Shimaoka3, Hideaki Yamada3, Jianbo Liang1, Naoteru Shigekawa1 (1. Osaka Metropolitan Univ., 2. Tohoku Univ., 3. AIST)

[C-10-08]A 66-GHz/121-GHz Dual-Mode Distributed VCO with Output Power and Tuning Range Improvement

◎Satoshi Kawahara1, Teruo Jyo1, Tsutomu Takeya1, Hitoshi Wakita1, Munehiko Nagatani1, Miwa Mutoh, Yuta Shiratori1, Hiroyuki Takahashi1 (1. NTT, Inc.)

[C-10-09]エンドランチコネクタとPCB基板を用いた簡易実装技術による100 GHz帯域InP-HBT増幅器モジュール

〇Ko Hasegawa1, Hitoshi Wakita1, Teruo Jyo1, Munehiko Nagatani1, Satoshi Kawahara1, Tsutomu Takeya1, Hiroyuki Takahashi1 (1. NTT, Inc.)

[C-10-10]150-GHz-Bandwidth InP-HBT Baseband Amplifier Module

〇Hitoshi Wakita1, Ko Hasegawa1, Teruo Jyo1, Munehiko Nagatani1, Hiroyuki Takahashi1 (1. NTT, Inc.)

[C-10-11]A Study on Improving Pixel Sensitivity for CMOS Image Sensors with 2D Edge Feature Extraction Capabilities

〇Masaya Ikuta1, Hiroki Morita1, Koki Fujiwara1, Ryuichi Ujiie2, Hideki Shima2, Shunsuke Okura1 (1. Ritsumeikan Univ., 2. Nisshinbo Micro Devices Inc.)