Session Details
[Mo-P]Device and Module Reliability, Packaging, and Applications
Mon. Sep 28, 2026 1:00 PM - 3:00 PM JST
Mon. Sep 28, 2026 4:00 AM - 6:00 AM UTC
Mon. Sep 28, 2026 4:00 AM - 6:00 AM UTC
Poster-C(4th Floor, G403+G404)
[Mo-P-78]Electric Field Concentration Analysis and Design Optimization of Double-Sided Cooling SiC MOSFET Power Modules via Gaussian Process Regression - Bayesian Optimization Workflow
*Jeong Hun Song1, Sang Won Yoon1 (1. Seoul National Univ. (Korea))
[Mo-P-79]Impact of Surge Current Stress on Asymmetric Trench SiC MOSFETs under Positive Gate Bias
*Wangchen Li1, Qihong Feng1, Shuiyou Zheng1, Huaxing Jiang1 (1. South China Univ. of Tech. (China))
[Mo-P-80]Comparatitive Evaluation of Switching Performance and dV/dt
Robustness in 1.2 kV SiC MOSFETs with Embedded SBDs and Cascode JFET Devices
*Gyuhyeok Kang1, seungwan Jung1, Jinwoo Park1, Jonghyeon Ryu1, Ogyun Seok1 (1. Pusan National University (Korea))
[Mo-P-81]Reliability Analysis and Test Results of Novel Die-Attach Technologies for SiC Baseless Power Modules in EV Charging Application
*Stefano Carboni1, Andrea Bianchi1 (1. ABB e-Mobility s.p.a. (Italy))
[Mo-P-82]Electrothermal Stability of SiC DMOSFET Under High-Frequency Half-Bridge Operation
*Geon-Hee Lee1, Jin-Woo Choi1, Jin-Woo Kim1,2, Sang Gi Kim2, Weon Chan Kim2, Gwon Je Kim2, Sang-Mo Koo1 (1. Kwangwoon University (Korea), 2. Eyeqlab (Korea))
[Mo-P-83]Impact of the AI Variable Load Profile on SiC MOSFETs Reliability
*Elena Mengotti1, Enea Bianda1, Till Riemenschneider1 (1. ABB Switzerland Ltd. (Switzerland))
[Mo-P-84]Thermal Structure Analysis of SiC JFETs Using Gate-Source Voltage Measurements
*Su Ik Park1, Joosun Yun2, Byongjin Ma3, Guesuk Lee3, Tae-Hee Jung3, Yu-Na Jung1, Gyu-Hyung Cho1, Youngbeom Kim1, Hyundon Jung1 (1. HORIBA STEC KOREA Ltd. (Korea), 2. ComPhysics (Korea), 3. Korea Electronics Tech. Inst. (Korea))
[Mo-P-85]GaN/SiC Hybrid Switch with Synchronous-Gate-Control Technique for High-Frequency and High-Reliability Applications
*Weihao Lu1, Sheng Li1, Yanfeng Ma1, Mingfei Li1, Siyang Liu1, Weifeng Sun1 (1. Univ. of Southeast (China))
[Mo-P-92LN]HV-H3TRB Reliability and Failure Analysis of 13 kV SiC Devices
*Kohei Ebihara1, Kazuya Konishi1, Yukiyasu Nakao1, Katsutoshi Sugawara1, Tatsuro Watahiki1 (1. Mitsubishi Electric Corp. (Japan))
[Mo-P-93LN]Reliability Enhancement of 1.7 kV SiC MOSFETs Through Optimized Passivation Process
*Vamsi Mulpuri1, Vishank Talesara1, Jaehoon Park1, Siddarth Sundaresan1 (1. Navitas Semiconductor (USA))