ICSCRM2026
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Session Details

Poster SessionTrack 08 RF, High-Temp., and Rad-Hard Devices and ICs

[Mo-P]RF, High-Temp., and Rad-Hard Devices and ICs

Mon. Sep 28, 2026 1:00 PM - 3:00 PM JST
Mon. Sep 28, 2026 4:00 AM - 6:00 AM UTC
Poster-C(4th Floor, G403+G404)

[Mo-P-70]Dual-functional Ni/4H-SiC Schottky interfaces: Robust UV and X-ray detection, imaging in extreme environments

*Chowdam Venkata Prasad1, Sunjae Kim2, Beomjun Park3, Geon-Hee Lee1, Jin-Woo Choi1, Jeongho Kim4, Wan Sik Hwang1, Jong-Min Oh1, Sang-Mo Koo1 (1. Kwangwoon University (Korea), 2. Korea Aerospace University (Korea), 3. Seoul National University (Korea), 4. Sungkyunkwan University School of Medicine (Korea))

[Mo-P-71]Modelling and Verification of Silicon Carbide-based Neutron Detectors

Asim Mumtaz1, *Ibtisam Alanazi1, Julien Bordes1, Jamie Brown1, Pankaj Joshi1, David Jenkins1, Vlado Lazarov1 (1. University of York (UK))

[Mo-P-72]Temperature-Dependent Output Characteristics of Ni-63-Driven 4H-SiC Betavoltaic Cells

*Young Jo Kim1, Ha Bin Jeong1, Jeong Hyun Moon1, Sung Yun Woo2, Young Jun Yoon3, Jae Hwa Seo1 (1. Korea Electrotechnology Res. Inst. (Korea), 2. Kyungpook National Univ. (Korea), 3. Gyeongkuk National Univ. (Korea))

[Mo-P-73]VNA S-Parameter-Derived Capacitance of SiC MOSFETs Under 900 V Bias Over Temperature

Yuta Tanimoto1, *Kyoka Nishio1, Seigo Mori1, Yuki Nakano1 (1. ROHM Co., Ltd. (Japan))

[Mo-P-74]Asymmetric Dynamic CGD During Turn-on and Turn-off of p-GaN HEMTs

*Taehyun Jang1, Hyemin Kang1 (1. Korea Inst. of Energy Tech. (Korea))

[Mo-P-75]Investigation of π-gate AlGaN/GaN High Electron Mobility Transistor for Enhanced Breakdown Voltage: A Simulation Study

*Ju-Hwan JEONG1, Young-Hyun Won1, Hyun-Seok Kim1 (1. Dongguk Univ.-Seoul (Korea))

[Mo-P-76]Impact of p-GaN Back Barrier Thickness on DC Performance in GaN-on-SiC HEMTs: A Simulation Study

*Young-Hyun Won1, Ju-Hwan Jeong1, Hyun-Seok Kim1 (1. Dongguk Univ.-Seoul (Korea))

[Mo-P-77]AlGaN/GaN HEMTs on 3C-SiC/Si-substrates with all TiN contact system

Wael Jatal2,1, Vladislav Kurtash1, Joern Pezoldt5,4, Uwe Baumann3, Saadman Abedin1, *Joerg Pezoldt1 (1. TU Ilmenau (Germany), 2. X-Fab Semiconductor Foundries GmbH (Germany), 3. IMMS gGmbH (Germany), 4. Swiss Institute of Bioinformatics (Switzerland), 5. École Polytechnique Fédérale de Lausanne (Switzerland))
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