[S2] Materials Science and high temperature processing of widegap materials 2

1:25 PM - 1:45 PM JST(4:25 AM - 4:45 AM UTC)

[S2.2] Growth of high-quality N-type 3-inch 4H-SiC crystals by solution method

*ZHU Can¹, YU Wancheng¹, IKUMI Motoki², DANG Yifan², ANDO Keisuke², UNNO Takama², HARADA Shunta^1,2, TAGAWA Miho^1,2, UJIHARA Toru^1,2,3 (1. Imass, Nagoya Univ., 2. Graduate School of Engineering, Nagoya Univ., 3. GaN-OIL, AIST)

Keywords:

溶液法,高品質,N型4H-SiC結晶,3イン

In this study, Sc is proved to effectively suppress hetero crystals. By adding Sc, we can obtain high quality and large size N-type SiC by solution method.