[S2] Materials Science and high temperature processing of widegap materials 2 | 日本金属学会 2020年春期(第166回)講演大会

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Session Details

Koubo Symposium

[S2]Materials Science and high temperature processing of widegap materials 2

Wed. Mar 18, 2020 12:45 PM - 6:00 PM JST
Wed. Mar 18, 2020 3:45 AM - 9:00 AM UTC

Rm. I W611,1st Flr., West Lecture Bldg.2

座長:福山博之(東北大学)、吉川健(東京大学)、原田俊太(名古屋大学)

座長時間
12:45～14:25 福山
14:40～16:00 吉川
16:15～18:00 原田
※表示の講演時間には質疑応答時間も含みます。
（質疑応答時間５分、基調講演と外国人特別講演は5～10分）

12:45 PM - 1:25 PM JST(3:45 AM - 4:25 AM UTC)

[S2.1][Keynote Lecture] Single crystal growth and defect reduction in wide band gap semiconductor SiC

*Ohtani Noboru¹ (1. Kwansei Gakuin Univ., School of Sci. and Technol.)

1:25 PM - 1:45 PM JST(4:25 AM - 4:45 AM UTC)

[S2.2]Growth of high-quality N-type 3-inch 4H-SiC crystals by solution method

*ZHU Can¹, YU Wancheng¹, IKUMI Motoki², DANG Yifan², ANDO Keisuke², UNNO Takama², HARADA Shunta^1,2, TAGAWA Miho^1,2, UJIHARA Toru^1,2,3 (1. Imass, Nagoya Univ., 2. Graduate School of Engineering, Nagoya Univ., 3. GaN-OIL, AIST)

1:45 PM - 2:05 PM JST(4:45 AM - 5:05 AM UTC)

[S2.3]Interface reconstruction on 4H-SiC (000-1) in the Si-Cr based solution

YAO Yuchuan¹, YOSHIDA kaho¹, *YOSHIKAWA Takeshi¹, CHAUSSENDE Didier² (1. Institute of Industrial Science, U. Tokyo, 2. Grenoble－Alpes Univ.-CNRS)

2:05 PM - 2:25 PM JST(5:05 AM - 5:25 AM UTC)

[S2.4]Rapid LPE growth of SiC using micro-particle effect

*Yamaguchi Shota¹, Narumi Taka², Yoshiakwa Takeshi¹ (1. IIS U.Tokyo, 2. IIS U.Tokyo(Present:Kyoto University）)

2:25 PM - 2:40 PM JST(5:25 AM - 5:40 AM UTC)

Break

2:40 PM - 3:20 PM JST(5:40 AM - 6:20 AM UTC)

[S2.5][Keynote Lecture] Operando X-ray topography method in 4H-SiC MOSFETs to investigate stacking fault expansion

*SHIMA AKIO¹, KONISHI KUMIKO¹, FUJITA RYUSEI¹, KOBAYASHI KEISUKE¹, YONEYAMA AKIO¹, MORI YUKI¹ (1. Research & Development Group, Hitachi, Ltd.)

3:20 PM - 3:40 PM JST(6:20 AM - 6:40 AM UTC)

[S2.6]Direct measurements of stacking fault energy in 4H-SiC by in-situ X-ray topography at high temperatures

FUJIE Fumihiro¹, *HARADA Shunta^1,2, UJIHARA Toru^1,2,3 (1. 名大工、2. 名大未来研、3. 産総研GaN-OIL)

3:40 PM - 4:00 PM JST(6:40 AM - 7:00 AM UTC)

[S2.7]Control of Nucleation of 3C-SiC by using Periodic Step Structures of 6H-SiC

*KAWANISHI Sakiko¹, WATANABE Ryo², SHIBATA Hiroyuki¹ (1. Tohoku Univ., 2. Tohoku Univ. (Present: ClassNK))

4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)

Break

4:15 PM - 4:55 PM JST(7:15 AM - 7:55 AM UTC)

日本金属学会 2020年春期(第166回)講演大会

Session Details

[S2]Materials Science and high temperature processing of widegap materials 2

[S2.1][Keynote Lecture] Single crystal growth and defect reduction in wide band gap semiconductor SiC

[S2.2]Growth of high-quality N-type 3-inch 4H-SiC crystals by solution method

[S2.3]Interface reconstruction on 4H-SiC (000-1) in the Si-Cr based solution

[S2.4]Rapid LPE growth of SiC using micro-particle effect

Break

[S2.5][Keynote Lecture] Operando X-ray topography method in 4H-SiC MOSFETs to investigate stacking fault expansion

[S2.6]Direct measurements of stacking fault energy in 4H-SiC by in-situ X-ray topography at high temperatures

[S2.7]Control of Nucleation of 3C-SiC by using Periodic Step Structures of 6H-SiC

Break

[S2.8][Keynote Lecture] R&D Strategy for High quality & large size GaN wafer

[S2.9]Crystal growth of AlN using Ni-Al flux

[S2.10]Influencing factors on solution growth of AlN using Cr-Ni solvent

[S2.11]Attempt and its characterization to remove sub-surface polishing damage on β-Ga₂O₃

Session Details

[S2]Materials Science and high temperature processing of widegap materials 2

[S2.1][Keynote Lecture] Single crystal growth and defect reduction in wide band gap semiconductor SiC

[S2.2]Growth of high-quality N-type 3-inch 4H-SiC crystals by solution method

[S2.3]Interface reconstruction on 4H-SiC (000-1) in the Si-Cr based solution

[S2.4]Rapid LPE growth of SiC using micro-particle effect

Break

[S2.5][Keynote Lecture] Operando X-ray topography method in 4H-SiC MOSFETs to investigate stacking fault expansion

[S2.6]Direct measurements of stacking fault energy in 4H-SiC by in-situ X-ray topography at high temperatures

[S2.7]Control of Nucleation of 3C-SiC by using Periodic Step Structures of 6H-SiC

Break

[S2.8][Keynote Lecture] R&D Strategy for High quality & large size GaN wafer

[S2.9]Crystal growth of AlN using Ni-Al flux

[S2.10]Influencing factors on solution growth of AlN using Cr-Ni solvent

[S2.11]Attempt and its characterization to remove sub-surface polishing damage on β-Ga2O3

[S2.11]Attempt and its characterization to remove sub-surface polishing damage on β-Ga₂O₃