Session Details
[P]P4~P12
Tue. Sep 20, 2022 1:00 PM - 2:30 PM JST
Tue. Sep 20, 2022 4:00 AM - 5:30 AM UTC
Tue. Sep 20, 2022 4:00 AM - 5:30 AM UTC
FIT Arena
※表示の講演時間には質疑応答時間も含みます。
(質疑応答時間5分、基調講演と招待講演は5~10分)
(質疑応答時間5分、基調講演と招待講演は5~10分)
[P4]Electric current and magnetic field direction dependence of magnetoresistance effect
in C11b Cr-Al thin film
*Sota IGUCHI1, Sosuke FUJIWARA1, Kentaro TOYOKI2, Yu SHIRATSUCHI2, Ryouichi NAKATANI2 (1. Osaka Univ. (master's student), 2. Osaka Univ.)
[P5]Effects of annealing atmosphere on magnetic properties of Fe-based nanocrystalline alloys
*Yutaro Takahashi1, Tetsuj Saito1, Hotaka Sakuma2, Hiroshi Watanabe2 (1. Chiba Institute of Technology, 2. TOHSEI INDUSTRIAL CO., LTD.)
[P6]Study on magnetic properties of electrolytic iron particles
*Yudai KODAMA1, Nguyen Phuong1, Takamichi Miyazaki1, Yasushi Endo1 (1. 東北大工)
[P7]Magnetic properties of Fe-Co/Fe-Co-Pt nanocomposite films prepared by plasma-gas condensation method
*Renta ISHIKAWA1, Syota OKUNO1, Takehiko HIHARA2, Reona MIYAZAKI2 (1. Nagoya Inst. Tech. (M), 2. Nagoya Inst. Tech.)
[P8]Effect of introducing artificial grain boundary phase on the magnetic properties
for Sm(Fe-Co)-B thin films
*Shintaro Hatanaka1, Yuichi Mori1, Kazuki Hirayama1, Masaaki Doi1, Toshiyuki Shima1 (1. Tohoku Gakuin Univ.)
[P9]Structure and magnetic properties for FeMnGa thin films by additive elements
*Tasuku Yokoe1, Masaaki Doi1, Toshiyuki Shima1 (1. Tohoku Gakuin Univ.)
[P10]Cu concentration dependence of magnetostrictive properties of CuxCo1-xFe2O4
*Shizuka KOSUGI1, Miu HISAMATSU2, Shun FUJIEDA2, Yuji OHISHI2, Satoshi SEINO2, Hiroaki MUTA2, Takashi NAKAGAWA2 (1. Graduate School of Engineering, Osaka Univ., 2. Graduate School of Engineering, Osaka Univ.)
[P11]Bulk Single Crystal Formation of InSb Based Dilute Magnetic Semiconductor from Melt
by Using Melt Droplet Solidification Process.
*Hagiri Sota1, Nagayama Katsuhisa2 (1. Shibaura Institute of Technology (master), 2. Shibaura Institute of Technology (Supervisor))
[P12]Raman spectral changes by Vickers indentation on Si1–xGex crystals grown by Traveling Liquidus-Zone method
*Tomoki KIYAMA1, Keigo YOSHIDA1, Marina TAKAIRA1, Yoshifumi IKOMA2, Masamichi KOHNO2, Yukiko OZAKI2, Junichiro SHIOMI3, Yasutomo ARAI4 (1. 九大工(院生)、2. 九大院工、3. 東大院工、4. JAXA)
