[IS] IS2 Recent Trends and Future Perspectives of Semiconductor Materials

1:00 PM - 1:30 PM JST(4:00 AM - 4:30 AM UTC)

[IS2.5] Ferroelectric Materials for Memory and Neuromorphic Device Applications

*Changhwan Choi^1,2 (1. Division of Materials Science and Engineering, Hanyang University, Seoul 04763, Korea, 2. Department of Semiconductor Engineering, Hanyang University, Seoul 04763, Korea)

Keywords:

Ferroelecric,Memory,Neurmorphic,Atomic layer deposition (ALD)

We demonstrated the memory characteristics (memory window etc) andvneuromorphic characteristics (recognition rate etc) using various ALD ferroelectric thin films