[IS] IS2 Recent Trends and Future Perspectives of Semiconductor Materials

13:00 〜 13:30

[IS2.5] Ferroelectric Materials for Memory and Neuromorphic Device Applications

*Changhwan Choi^1,2 (1. Division of Materials Science and Engineering, Hanyang University, Seoul 04763, Korea, 2. Department of Semiconductor Engineering, Hanyang University, Seoul 04763, Korea)

キーワード：

Ferroelecric、Memory、Neurmorphic、Atomic layer deposition (ALD)

We demonstrated the memory characteristics (memory window etc) andvneuromorphic characteristics (recognition rate etc) using various ALD ferroelectric thin films