Year 2025 Autumn Annual Meeting of JIMM
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Session Details

公募シンポジウム講演

[S4]S4.New Materials Science on Nanoscale Structures and Functions at Crystal Interface(2)

Thu. Sep 18, 2025 9:15 AM - 12:05 PM JST
Thu. Sep 18, 2025 12:15 AM - 3:05 AM UTC
Room N(C310 3rd floor Building C)
Chair:FENG Bin, Ken Niwa
※表示の講演時間には質疑応答時間も含みます。
（質疑応答時間5分、基調講演と招待講演は5～10分）
9:15 AM - 9:55 AM JST(12:15 AM - 12:55 AM UTC)Keynote Lecture

[S4.11][Keynote Lecture] Solid-State Electrochemical Thermal Switches

*Ohta Hiromichi1 (1. RIES, Hokkaido Univ.)
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9:55 AM - 10:15 AM JST(12:55 AM - 1:15 AM UTC)

[S4.12]Atomic-scale analysis of reduction in lattice thermal conductivity due to point defects in compound semiconductor

*YOKOI Tatsuya1, Fujii Susumu2, Ogua Yu1, Matsunaga Katsuyuki1,3 (1. Nagoya University, 2. Kyushu University, 3. Japan Fine Ceramics Center)
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10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[S4.13]Effect of coordination environments around screw dislocations core in GaN on phonon thermal conduction

*INOUE Shota1, Sekimoto Wataru1, Yoshiya Masato1,2 (1. Graduate School of Engineering, The University of Osaka, 2. Japan Fine Ceramics Center)
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10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

break

10:45 AM - 11:05 AM JST(1:45 AM - 2:05 AM UTC)

[S4.14]5D-STEM Analysis of Diamond/Graphene Hetero-Interfacial Structure

*MUTO Shunsuke1, Saito Genki2, Ueda Kenji3 (1. IMaSS, Nagoya Univ., 2. Grad. School of Eng. Nagoya Univ., 3. Waseda Univ.)
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11:05 AM - 11:20 AM JST(2:05 AM - 2:20 AM UTC)

[S4.15]Origin of anomalous electroplasticity: First-principles finite electric field calculations of dislocation motion in ZnS

*Shimada Takahiro1, Ikeda Yoshitaka1, Minami Susumu1, Zou Yu2 (1. Kyoto Univ., 2. Univ. of Toronto)
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11:20 AM - 11:35 AM JST(2:20 AM - 2:35 AM UTC)

[S4.16]Effect of edge in TiO2 on photovoltaic properties

*ISOMURA Shuntaro1, SEKIMOTO Wataru1, YOSHIYA Masato1,2 (1. Graduate School of Engineering, The University of Osaka, 2. Japan Fine Ceramics Center)
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11:35 AM - 11:50 AM JST(2:35 AM - 2:50 AM UTC)

[S4.17]Development of a method for observing dislocation charges in GaN-based semiconductors

*Oyaizu Ayumu1, Toyama Satoko1, Seki Takehito1,2, Kanitani Yuya3, Shibata Naoya1,4 (1. The Univ. of Tokyo, 2. JST PRESTO, 3. Sony Semiconductor Solutions, 4. JFCC)
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11:50 AM - 12:05 PM JST(2:50 AM - 3:05 AM UTC)

[S4.18]Quantitative Analysis of Domain Wall Structure and Local Magnetic Constants in Nanocrystalline Soft Magnetic Materials Using DPC STEM

*XU Michael1, Seki Takehito1,2, Ohta Motoki3, Kohno Yuji4, Shibata Naoya1,5 (1. The University of Tokyo, 2. JST PRESTO, 3. Shimane University, 4. JEOL, 5. JFCC)
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