[P] P202~P216 Mechanical Properties of Materials

[P205] Effects of P and B on the Yield Strength of Si Single Crystals

○Taiki Kusano¹, Tatsuya Morikawa¹, Shigeto Yamasaki¹, Masaki Tanaka¹, Jun Fujise², Toshiaki Ono² (1. Kyushu University, 2. SUMCO Corporation)

Keywords:

Si Single Crystals,Yield Strength,Dislocation

High-temperature tensile tests of B-doped Si at 1173–1323 K showed that higher B concentration increases CRSS mainly by raising athermal stress. Based on the activation energy of about 4.5 eV, yielding is discussed in terms of dislocation multiplication involving climb and cross-slip, and compared with P-doped Si.