[19a-A201-1~13] 12.4 Organic light-emitting devices and organic transistors

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19a-A201-8] Gate-Dielectric-Dependent Carrier Injection Characteristics in Bottom-Gate-Bottom-Contact-Type Organic Single-Crystal TFTs

〇(D)Keito Murata¹, Shinji Tsuchida¹, Satoru Inoue¹, Toshiki Higashino², Tatsuo Hasegawa¹ (1.U. Tokyo, 2.AIST)

Keywords:

organic semiconductors,transistors,carrier injection

Bottom-gate-bottom-contact-type organic TFTs are suitable for practical use. In this structure the gate dielectric can have an effect on carrier injection. Here, we fabricated TFTs by coating semiconductor single-crystal thin films on various gate dielectrics, and device and injection characteristics were investigated. As a result, device on the gate dielectric with relatively high trap density exhibited small device mobility and large contact resistance near the source electrode.