[19a-B201-1~9] 15.7 Crystal characterization, impurities and crystal defects

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[19a-B201-7] Development of ANN potential for interaction of intrinsic defects in Si

〇Kazuki Yamanaka¹, Eiji Kamiyama³, Tatsuya Yokoi², Yusuke Noda³, Koji Sueoka³ (1.Graduate School of Engineering, Okayama pref Univ., 2.Graduate School of Engineering, Nagoya Univ., 3.Faculty of Computer Science and Systems Engineering, Okayama pref Univ.)

Keywords:

ANN potential,Instrinsic defect,Si