The 84th JSAP Autumn Meeting 2023
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Oral presentation15 Crystal Engineering : 15.7 Crystal characterization, impurities and crystal defects

[19a-B201-1~9]15.7 Crystal characterization, impurities and crystal defects

Tue. Sep 19, 2023 9:00 AM - 11:30 AM JST
Tue. Sep 19, 2023 12:00 AM - 2:30 AM UTC
B201 (Civic Auditorium)
Hidetoshi Suzuki(Miyazaki Univ.), Takuto Kojima(Nagoya Univ.), Eiji Kamiyama(GlobalWafers Japan)
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9:00 AM - 9:15 AM JST(12:00 AM - 12:15 AM UTC)

[19a-B201-1]Analysis of dislocation cluster generation behavior in multicrystalline silicon

〇(M1)Kazuma Torii1, Takuto Kojima2,4, Kentaro Kutsukake3, Hiroaki Kudo2, Noritaka Usam1 (1.Grad. Eng. Nagoya Univ., 2.Grad. Info. Nagoya Univ., 3.AIP RIKEN, 4.AIST)
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9:15 AM - 9:30 AM JST(12:15 AM - 12:30 AM UTC)

[19a-B201-2]Dislocation density analysis of high-index Ga2O3 grown by vertical Bridgman method

〇Koichi Kakimoto1, Isao Takahashi1, Taketoshi Tomida1, Kei Kamada1,2, Vladimir Kochurikhin2, Satoshi Nakano3, Yongzhao Yao4, Yukari ISHIKAWA4, Akira Yoshikawa1,2,5 (1.NICHe, Tohoku Univ., 2.C & A, 3.RIAM, Kyushu Univ., 4.FCC, 5.IMR, Tohoku Univ.)
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9:30 AM - 9:45 AM JST(12:30 AM - 12:45 AM UTC)

[19a-B201-3]Numerical analysis of convection of CZ-Ga2O3 grown by skull melting method

〇Koichi Kakimoto1, Isao Takahashi2, Taketoshi Tomida1, Vladimir Kochurikhin1, Kei Kamada1,2, Satoshi Nakano3, Akira Yoshikawa1,2,4 (1.NICHe, Tohoku Univ., 2.C & A, 3.RIAM, Kyushu Univ., 4.IMR, Tohoku)
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9:45 AM - 10:00 AM JST(12:45 AM - 1:00 AM UTC)

[19a-B201-4]Lattice parameter change of MoO3(2) by heat treatment

〇Daichi Terasawa1, Zhao Jiaming1, Suematsu Hisayuki1, Thi Mai Dung1, Nakayama Tadachika1 (1.Nagaoka univ of tech.)
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10:15 AM - 10:30 AM JST(1:15 AM - 1:30 AM UTC)

[19a-B201-5]α-Quartz-β-Cristobalite alloy-like model for thermally-oxidized SiO2 film on Si wafers

〇Eiji Kamiyama1,2, Koji Sueoka2 (1.GlobalWafers Japan Co., Ltd., 2.Okayama Pref. Univ.)
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10:30 AM - 10:45 AM JST(1:30 AM - 1:45 AM UTC)

[19a-B201-6]A total-energy prediction model for silicon crystal structures by partial least squares

〇Yusuke Noda1, Eiji Kamiyama1,2, Hiroya Iwashiro2, Koji Sueoka1 (1.Okayama Pref. Univ., 2.GlobalWafers Japan Co., Ltd.)
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10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[19a-B201-7]Development of ANN potential for interaction of intrinsic defects in Si

〇Kazuki Yamanaka1, Eiji Kamiyama3, Tatsuya Yokoi2, Yusuke Noda3, Koji Sueoka3 (1.Graduate School of Engineering, Okayama pref Univ., 2.Graduate School of Engineering, Nagoya Univ., 3.Faculty of Computer Science and Systems Engineering, Okayama pref Univ.)
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11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[19a-B201-8]Experimental Study on Defect Behavior during Crystal Growth of Phosphorus Heavily Doped Cz-Si

〇Masataka Hourai1, Yasuhito Narushima2, Koutaro Koga2, Kazuhisa Torigoe1, Hiroshi Horie1, Toshiaki Ono1, Naoya Nonaka1, Koji Sueoka3 (1.SUMCO Corp., 2.SUMCO TECHXIV Corp., 3.Okayama Pref. Univ.)
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11:15 AM - 11:30 AM JST(2:15 AM - 2:30 AM UTC)

[19a-B201-9]DFT study on peculiar defect behavior during crystal growth of P heavily doped CZ-Si

〇Kouji Sueoka1, Yasuhito Narushima2, Koutaro Koga2, Kazuhisa Torigoe3, Hiroshi Horie3, Toshiaki Ono3, Naoya Nonaka3, Masataka Hourai3 (1.Okayama Pref. University, 2.SUMCO TECHXIV Corpation, 3.SUMCO Corporation)
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