[19p-A306-1~16] 2.1 Detection Devices

3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)

[19p-A306-10] Radiation detection characteristics for BGaN detectors under high-dose neutron

〇(M1)Tatsuhiro Sakurai¹, Ryohei Kudo¹, Seiya Kawasaki², Tetsuichi Kishishita³, Yoshinori Sakurai⁴, Hiroshi Yashima⁴, Takahiro Makino⁵, Takeshi Ohshima⁵, Yoshio Honda⁶, Hiroshi Amano⁶, Yoku Inoue¹, Toru Aoki⁷, Takayuki Nakano^1,7 (1.Shizuoka Univ., 2.Nagoya Univ., 3.KEK, 4.KURNS, 5.QST, 6.IMaSS Nagoya Univ., 7.R.I.E. Shizuoka Univ.)

Keywords:

neutron,semiconductor,BGaN