[19p-B101-1~15] 15.4 III-V-group nitride crystals

5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[19p-B101-12] Dependence of emission efficiency of 230 nm AlGaN far-UVC LED on quantum well structure

〇(M1)Yuya Nagata^1,2, Fumiya Chugenji^1,2, Noritoshi Maeda¹, Sachie Fujikawa^1,2, Hiroyuki Yaguchi², Yasushi Iwaisako³, Hideki Hirayama¹ (1.RIKEN, 2.Saitama Univ., 3.Nippon Tungsten)

Keywords:

AlGaN,far-UVC LED