The 84th JSAP Autumn Meeting 2023
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Oral presentation15 Crystal Engineering : 15.4 III-V-group nitride crystals

[19p-B101-1~15]15.4 III-V-group nitride crystals

Tue. Sep 19, 2023 1:30 PM - 6:00 PM JST
Tue. Sep 19, 2023 4:30 AM - 9:00 AM UTC
B101 (Civic Auditorium)
Ryuji Katayama(Osaka Univ.), Hideaki Murotani(Tokuyama College), Kazuyoshi Iida(豊田合成)
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1:30 PM - 2:00 PM JST(4:30 AM - 5:00 AM UTC)

[19p-B101-1][INVITED] Forefronts of Water Treatment Technologies using UV radiation

〇Kumiko Oguma1 (1.Univ. Tokyo)
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2:00 PM - 2:15 PM JST(5:00 AM - 5:15 AM UTC)

[19p-B101-2]Improved Efficiency of Far-UV LEDs with Reduced Al Compositions of Barrier Layers

〇Kenjiro Uesugi1,2, Shuhei Ichikawa3,4, Takao Nakamura5, Masahiko Tsuchiya6, Kazunobu Kojima3, Hideto Miyake5 (1.ORIP, Mie Univ., 2.Grad. Sch. of RIS, Mie Univ., 3.Grad. Sch. of Eng., Osaka Univ., 4.UHVEM, Osaka Univ., 5.Grad. Sch. of Eng., Mie Univ., 6.Stanley Electric Co.)
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2:15 PM - 2:30 PM JST(5:15 AM - 5:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-B101-3]Realization of EQE 0.008 % operation in 221.5 nm far-UVC AlGaN LED

〇(M1)Yuki Nakamura1,2, Kou Sumishi1,3, Sachie Fujikawa2,1, Hiroyuki Yaguchi2, Akira Endoh3, Hiroki Fujishiro3, Yasushi Iwaisako4, Hideki Hirayama1 (1.RIKEN, 2.Saitama Univ., 3.Tokyo University of Science, 4.Nippon Tungsten)
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2:30 PM - 2:45 PM JST(5:30 AM - 5:45 AM UTC)

[19p-B101-4]Achievement of 3.9 times efficiency increase of 232nm UVC-LED with reflective PhC

〇Yukio Kashima1, Eriko Matsuura1, Hidetoshi Shinohara2, Ryuichirou Kamimura3, Yamato Osada3, Masayuki Fukuda3, Tsumugu Nagano4, Hiroyuki Oogami5, Yasushi Iwaisako5, Minoru Kawahara6, Masato Yamada6, Hideki Hirayama1 (1.RIKEN, 2.Shibaura machine, 3.ULVAC, 4.DNP, 5.NIPPON TUNGSTEN, 6.Shin-Etsu Chemical)
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2:45 PM - 3:00 PM JST(5:45 AM - 6:00 AM UTC)

[19p-B101-5]Efficient Operation of 230nm far-UVC AlGaN based LEDs with p-Side Graded Layer

〇Noritoshi Maeda1, Yasushi Iwaisako2, Hideki Hirayama1 (1.RIKEN, 2.Nippon Tungsten)
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3:15 PM - 3:30 PM JST(6:15 AM - 6:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-B101-6]Effects of AlN Interlayer Thickness on AlN Templates on Sapphire Substrates

〇(M2)Tomoaki Kachi1, Hayata Takahata1, Ryunosuke Oka1, Hisanori Ishiguro1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Motoaki Iwaya1, Yoshiki Saito2, Koji Okuno2 (1.Meijo Univ., 2.TOYODA GOSEI Co.,Ltd)
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3:30 PM - 3:45 PM JST(6:30 AM - 6:45 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-B101-7]Homoepitaxial regrowth of AlGaN chemically-mechanically polished

〇(M1)Ryoya Yamada1, Ryosuke Kondo1, Koki Hattori1, Toma Nishibayashi1, Yoshinori Imoto1, Sho Iwayama1, Motoaki Iwaya1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Hideto Miyake2 (1.Meijo Univ, 2.Mie Univ)
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3:45 PM - 4:00 PM JST(6:45 AM - 7:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-B101-8]Investigation of sharp hetero-interface formation in AlGaN-based UV-B LDs

〇(M2)Ryosuke Kondo1, Koki Hattori1, Yoshinori Imoto1, Ryoya Yamada1, Sho Iwayama1, Motoaki Iwaya1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Hideto Miyake2 (1.Meijo Univ., 2.Mie Univ.)
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4:00 PM - 4:15 PM JST(7:00 AM - 7:15 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-B101-9]Analysis of alteration layer formed by treating AlxGa1-xN with saturated vapor pressure water

〇Eri Matsubara1, Ryosuke Kondo1, Toma Nishibayashi1, Ryoya Yamada1, Yoshinori Imoto1, Koki Hattori1, Sho Iwayama1, Motoaki Iwaya1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Shintaro Kobayashi3, Taiji Yamamoto3, Hideto Miyake2 (1.Meijo Univ., 2.Mie Univ., 3.Rigaku Corp.)
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4:15 PM - 4:30 PM JST(7:15 AM - 7:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-B101-10]Depth-resolved nanoXRD of AlGaN-based UV-B wavelength laser diode

〇Shota Taniguchi1, Yusuke Hayashi1, Tetsuya Tohei1, Kazushi Sumitani2, Yasuhiko Imai2, Shigeru Kimura2, Motoaki Iwaya3, Hideto Miyake4, Akira Sakai1 (1.Grad. Sch. Eng. Sci., Osaka Univ., 2.JASRI, 3.Meijo Univ., 4.Grad. Sch. Eng., Mie Univ.)
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4:45 PM - 5:00 PM JST(7:45 AM - 8:00 AM UTC)

[19p-B101-11]Investigation of n-AlGaN layer for development of 225 nm efficient far-UVC LED

〇Taiga Kirihara1,2, Yukio Kashima1, Hiroyuki Yaguchi2, Yasushi Iwaisako3, Hideki Hirayama1 (1.RIKEN, 2.Saitama Univ., 3.Nippon Tungsten)
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5:00 PM - 5:15 PM JST(8:00 AM - 8:15 AM UTC)

[19p-B101-12]Dependence of emission efficiency of 230 nm AlGaN far-UVC LED on quantum well structure

〇(M1)Yuya Nagata1,2, Fumiya Chugenji1,2, Noritoshi Maeda1, Sachie Fujikawa1,2, Hiroyuki Yaguchi2, Yasushi Iwaisako3, Hideki Hirayama1 (1.RIKEN, 2.Saitama Univ., 3.Nippon Tungsten)
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5:15 PM - 5:30 PM JST(8:15 AM - 8:30 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-B101-13]Electrical properties of Mg-doped Al0.35Ga0.65N contact/graded AlGaN layer

〇(M2)Hayata Takahata1, Tomoaki Kachi1, Maho Fujita1, Naoki Hamashima1, Ryunosuke Oka1, Hisanori Ishiguro1, Tetsuya Takeuchi1, Satoshi Kamiyama1, Motoaki Iwaya1, Yoshiki Saito2, Koji Okuno2 (1.Fac. Sci & Tec., Meijo Univ., 2.TOYODA GOSEI Co.,Ltd.)
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5:30 PM - 5:45 PM JST(8:30 AM - 8:45 AM UTC)

[19p-B101-14]Electrical properties of V-based Ohmic contacts on n-type AlGaN with high Al content

〇Kazuaki Ebata1, Masanobu Hiroki1, Kouta Tateno1, Kazuhide Kumakura1, Yoshitaka Taniyasu1 (1.NTT BRL)
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5:45 PM - 6:00 PM JST(8:45 AM - 9:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[19p-B101-15]428 nm SHG from a-Plane GaN Vertical Microcavity with Ultrashort Laser Pulses

〇(DC)Tomoaki Nambu1,2, Tomohiro Nakahara1,2, Yuma Yasuda1,2, Yasufumi Fujiwara1, Masayoshi Tonouti3, Masahiro Uemukai1,2, Tomoyuki Tanikawa1,2, Ryuji Katayama1,2 (1.Grad. Sch. of Eng., Osaka Univ., 2.OTRI-Spin, Osaka Univ., 3.ILE, Osaka Univ.)
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