[20a-A201-1~11] 3.14 Silicon photonics and integrated photonics (formerly 3.15)

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)

[20a-A201-7] Wafer-level characterization of integrated optical devices using OFDR
- Highly reproducible extraction of propagation loss in wire-waveguides -

〇Tsuyoshi Horikawa¹, Atsushi Kitamura², Masanori Yatani², Nobuhiko Nishiyama^1,3,4 (1.School of Engineering, Tokyo Institute of Technology, 2.Santec LIS Corp., 3.IIR, Tokyo Institute of Technology, 4.PETRA)

Keywords:

Silicon photonics,Optical Frequency Domain Reflectometry,silicon wire-waveguides

The wafer-level testing using the OFDR method was applied for the characterization of C-band single-mode silicon wire-waveguides. The measurement deviation of the propagation loss and group refractive index was within 2% and 1%, respectively. We measured 73 elements on a single 300-mm wafer and confirmed that the wafer-level OFDR method enable highly reliable device characterization.