[20a-A311-1~8] 15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

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[20a-A311-3] Excitation Intensity Dependence of Luminescence in the Mid-infrared Region in Lattice-matched InAs/GaAsSb Superlattices Fabricated by MOVPE Method

〇Kouji Maeda¹, Takeshi Fujisawa², Masakazu Arai¹ (1.Univ. of Miyazaki, 2.Hokkaido Univ.)

Keywords:

mid-infrared,superlattice,lattice-match

In our previous studies of InAs/GaSb type II superlattices, we found conditions for emission in the wavelength range of 3.5-4.5 µm. In this study, we attempted to fabricate a lattice-matched superlattice with a barrier layer of GaAsSb in order to obtain even better interface state. As a result, a superlattice with emission in the wavelength range from 3.5 to 4.5 µm was obtained.