Session Details

[20a-A311-1~8]15.3 III-V-group epitaxial crystals, Fundamentals of epitaxy

Wed. Sep 20, 2023 9:30 AM - 11:45 AM JST
Wed. Sep 20, 2023 12:30 AM - 2:45 AM UTC
A311 (KJ Hall)
Kwoen Jinkwan(Univ. of Tokyo), Keisuke YAMANE(Toyohashi Univ. of Tech.)

[20a-A311-1]Characterization of InAs/GaAs(111)A Infrared Photodetector

〇Takaaki Mano1, Akihiro Ohtake1, Takuya Kawazu1, Hideki Miyazaki1, Yoshiki Sakuma1 (1.NIMS)

[20a-A311-2]MOVPE Growth and Characterization of 3.3-µm-Band Resonant Cavity LED

〇Masakazu Arai1, Koki Hombu1, Koji Maeda1 (1.Univ. of Miyazaki)

[20a-A311-3]Excitation Intensity Dependence of Luminescence in the Mid-infrared Region in Lattice-matched InAs/GaAsSb Superlattices Fabricated by MOVPE Method

〇Kouji Maeda1, Takeshi Fujisawa2, Masakazu Arai1 (1.Univ. of Miyazaki, 2.Hokkaido Univ.)

[20a-A311-4]Mid-Infrared Emission of Strain Compensated InAsSb/InAsP Superlattice on InAs Substrate Fabricated by MOVPE Method

〇Kenshiro Hikita1, Koki Hombu1, Koji Maeda1, Masakazu Arai1 (1.Miyazaki Univ.)

[20a-A311-5]Improvement of Thermoelectric Performance of Polycrystalline III-V Semiconductor Thin Films using Bayesian Optimization

〇Takamitsu Ishiyama1,2, Kouki Nozawa1, Takashi Suemasu1, Kaoru Toko1 (1.Univ. of Tsukuba, 2.JSPS Research Fellow)

[20a-A311-6]Growth of GaAsN thin films with controlling N distribution in the growth and in-plane directions on vicinal GaAs substrates using the ALE method

〇Shota Hirakawa1, Masahiro Kawano1, Shunsaku Takagi1, Hidetoshi Suzuki1 (1.Miyazaki Univ.)

[20a-A311-7]Selective lateral MOVPE growth of InP on SOI (001) substrates for III-V/Si integration

〇Hiroya Homma1, Hiroki Sugiyama1, Tatsurou Hiraki1, Toru Segawa1, Shinji Matsuo1 (1.NTT)

[20a-A311-8]Epitaxial growth of wurtzite InP film by SA-MOVPE

〇Yuki Azuma1, Ziye Zheng1, Junichi Motohisa1, Katsuhiro Tomioka1 (1.Hokkaido Univ.)