Presentation Information

11:00 AM - 11:15 AM JST(2:00 AM - 2:15 AM UTC)

[20a-B203-8]Transient Oscillation of the Resonant Tunneling Diode Oscillator Outside the Self-Oscillation Region

〇(M2)Tomoki Kobanawa¹, Takashi Arikawa^2,3, Safumi Suzuki⁴, Koichiro Tanaka^1,5 (1.Dept. of Physics, Kyoto Univ., 2.University of Hyogo, 3.JST PRESTO, 4.Tokyo Tech., 5.iCeMS, Kyoto Univ.)

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Keywords:

Resonant Tunneling Diode,Terahertz,Transient

Resonant tunneling diode (RTD) oscillators are promising candidates for room-temperature terahertz (THz) light sources, and they are expected to be used in various applications such as communications. In our previous report, we demonstrated that oscillation can be induced by injecting THz pulses into the RTD, even when the applied bias voltage is lower than the self-oscillation threshold voltage. In this presentation, we report that transient oscillation can also be induced by instantaneous bias voltage modulation.

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