Presentation Information
[20a-C501-8]Very high Curie temperature (530 K) in ferromagnetic semiconductor (Ga,Fe)Sb grown on vicinal GaAs(001) substrates
〇(M2)Kenta Takabayashi1, Masaaki Tanaka2, Pham Nam Hai1 (1.Tokyo Tech, 2.Univ. Tokyo)
Keywords:
ferromagnetic semiconductor,(Ga,Fe)Sb,Curie temperature
Recently, we have realized room-temperature ferromagnetism in heavily doped (Ga,Fe)Sb and (In,Fe)Sb grown on GaAs(001) just-cut substrates, and very recently in (In,Fe)As grown on vicinal GaAs(001) substrates. The highest Curie temperature (TC) of (Ga1-x,Fex)Sb is about 400 K at x = 30%, and that of (In1- x,Fex)Sb is 385 K at x = 35%. However, first principle calculations have predicted a much higher TC up to 1000 K in Fe-doped III-V FMSs. Thus, there is still room for TC to rise.
In this work, we studied heavily Fe-doped (Ga0.76,Fe0.24)Sb thin films grown on vicinal GaAs(001) substrates with very high TC. Reflection infra-red (IR) magnetic circular dichroism (MCD) spectroscopy shows the similar spectrum to that of other Fe-doped (Ga,Fe)Sb grown on just-cut GaAs(001) substrates, indicating that our (Ga0.76,Fe0.24)Sb is an intrinsic ferromagnetic semiconductor (FMS). Arrott plots of the IR-MCD vs. magnetic field hysteresis indicate a very high TC = 530 K, which is the highest TC reported so far for FMSs.
In this work, we studied heavily Fe-doped (Ga0.76,Fe0.24)Sb thin films grown on vicinal GaAs(001) substrates with very high TC. Reflection infra-red (IR) magnetic circular dichroism (MCD) spectroscopy shows the similar spectrum to that of other Fe-doped (Ga,Fe)Sb grown on just-cut GaAs(001) substrates, indicating that our (Ga0.76,Fe0.24)Sb is an intrinsic ferromagnetic semiconductor (FMS). Arrott plots of the IR-MCD vs. magnetic field hysteresis indicate a very high TC = 530 K, which is the highest TC reported so far for FMSs.