講演情報
[20a-C501-8]Very high Curie temperature (530 K) in ferromagnetic semiconductor (Ga,Fe)Sb grown on vicinal GaAs(001) substrates
〇(M2)Kenta Takabayashi1, Masaaki Tanaka2, Pham Nam Hai1 (1.Tokyo Tech, 2.Univ. Tokyo)
キーワード：
ferromagnetic semiconductor、(Ga、Fe)Sb、Curie temperature
Recently, we have realized room-temperature ferromagnetism in heavily doped (Ga,Fe)Sb and (In,Fe)Sb grown on GaAs(001) just-cut substrates, and very recently in (In,Fe)As grown on vicinal GaAs(001) substrates. The highest Curie temperature (TC) of (Ga1-x,Fex)Sb is about 400 K at x = 30%, and that of (In1- x,Fex)Sb is 385 K at x = 35%. However, first principle calculations have predicted a much higher TC up to 1000 K in Fe-doped III-V FMSs. Thus, there is still room for TC to rise.
In this work, we studied heavily Fe-doped (Ga0.76,Fe0.24)Sb thin films grown on vicinal GaAs(001) substrates with very high TC. Reflection infra-red (IR) magnetic circular dichroism (MCD) spectroscopy shows the similar spectrum to that of other Fe-doped (Ga,Fe)Sb grown on just-cut GaAs(001) substrates, indicating that our (Ga0.76,Fe0.24)Sb is an intrinsic ferromagnetic semiconductor (FMS). Arrott plots of the IR-MCD vs. magnetic field hysteresis indicate a very high TC = 530 K, which is the highest TC reported so far for FMSs.
In this work, we studied heavily Fe-doped (Ga0.76,Fe0.24)Sb thin films grown on vicinal GaAs(001) substrates with very high TC. Reflection infra-red (IR) magnetic circular dichroism (MCD) spectroscopy shows the similar spectrum to that of other Fe-doped (Ga,Fe)Sb grown on just-cut GaAs(001) substrates, indicating that our (Ga0.76,Fe0.24)Sb is an intrinsic ferromagnetic semiconductor (FMS). Arrott plots of the IR-MCD vs. magnetic field hysteresis indicate a very high TC = 530 K, which is the highest TC reported so far for FMSs.