[20a-C601-1~10] 13.9 Compound solar cells

10:45 AM - 11:00 AM JST(1:45 AM - 2:00 AM UTC)Presentation by Applicant for JSAP Young Scientists Presentation Award

[20a-C601-7] Impact of Ag Addition on the Bulk and Interface Characteristics of CIGS Solar Cells

〇Yosuke Abe¹, Ryotaro Fukuda¹, Takahito Nishimura¹, Akira Yamada¹ (1.Tokyo Tech)

Keywords:

semiconductor,solar cell,Cu(In,Ga)Se2

In this presentation, we systematically evaluate the effects of Ag addition on the bulk and interface properties of Cu(In,Ga)Se2 (CIGS) solar cells. The results show that the addition of Ag leads to a decrease in defect density within the CIGS bulk and an increase in the bandgap of the depletion region due to enhanced Ga diffusion. This results in a 20 mV improvement in the open-circuit voltage. However, the addition of Ag also increases the series resistance. Theoretical calculations using SCAPS reveal that the increased contact resistance at the backside (Ag,Cu)(In,Ga)Se2/Mo interface is the contributing factor.